Injection-gated DI diode with gate-controlled holding voltage

Double-injection (DI) devices consist of an anode (p + ) and a cathode (n + ) in a semi-insulator containing deep traps and exhibit S-type differential negative resistance (DNR) similar to SCR's under proper conditions [1]-[6]. Recently this laboratory reported a DI device with a hole emitting...

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Veröffentlicht in:	IEEE transactions on electron devices 1981-05, Vol.28 (5), p.557-560, Article 557
Hauptverfasser:	Kapoor, A.K., Henderson, H.T.
Format:	Artikel
Sprache:	eng
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