Angular-resolved photoemission from GaAs(110) surfaces with adsorbed Al

Angular-resolved photoemission from GaAs(110) surfaces with adsorbed Al

GaAs(110) surfaces with adsorbed Al were studied by a combination of angular-resolved valence band photoemission, Ga 3d core level photoemission, low energy electron loss spectroscopy and Auger electron spectroscopy. At room temperature Al is adsorbed on top of GaAs. After heat treatment the compoun...

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Veröffentlicht in:Surface science 1981, Vol.102 (1), p.264-270
Hauptverfasser: Huijser, A., Van Laar, J., Van Rooy, T.L.
Format: Artikel
Sprache:eng
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Zusammenfassung:GaAs(110) surfaces with adsorbed Al were studied by a combination of angular-resolved valence band photoemission, Ga 3d core level photoemission, low energy electron loss spectroscopy and Auger electron spectroscopy. At room temperature Al is adsorbed on top of GaAs. After heat treatment the compound AlAs is formed at the surface, which is used as a substrate for Ga adsorption to form the inverted structure of the system GaAs + Al.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(81)90320-4