Measurement of the impurity diffusion of In in Ni single crystals by secondary-ion mass spectrometry (SIMS)

Secondary-ion mass spectrometry (SIMS) has been used to study the impurity diffusion ion of indium in nickel single crystals over the temperature range of 777 to 1513 K. The diffusion coefficients ranged from 4.1 × 10 −17 to 2.4 × 10 −9 cm 2 s −1 . Comparison of these values with radiotracer data in...

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Veröffentlicht in:	Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties Physics of condensed matter. Defects and mechanical properties, 1981-05, Vol.43 (5), p.1205-1219
Hauptverfasser:	Gust, W., Hintz, M. B., Lodding, A., Odelius, H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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