Melting phenomena and pulsed-laser annealing in semiconductors
Annealing of displacement damage (amorphous as well as layers containing only dislocation loops), dissolution of boron precipitates, broadening of dopant profiles, and the formation of constitutional supercooling cells have been studied in laser annealed silicon. These samples were irradiated with l...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1981-12, Vol.52 (12), p.7121-7128 |
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| container_end_page | 7128 |
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| container_issue | 12 |
| container_start_page | 7121 |
| container_title | J. Appl. Phys.; (United States) |
| container_volume | 52 |
| creator | Narayan, J. Fletcher, J. White, C. W. Christie, W. H. |
| description | Annealing of displacement damage (amorphous as well as layers containing only dislocation loops), dissolution of boron precipitates, broadening of dopant profiles, and the formation of constitutional supercooling cells have been studied in laser annealed silicon. These samples were irradiated with laser pulses (λ = 0.485 μm, E = 0.7–1.25 J cm−2, τ = 9 ns), the same as those used by Compaan and coworkers for Raman temperature measurements. In contrast to their conclusion, present results can be interpreted only on the basis of a melting model. |
| doi_str_mv | 10.1063/1.328685 |
| format | Article |
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W.</creatorcontrib><creatorcontrib>Christie, W. H.</creatorcontrib><creatorcontrib>Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Narayan, J.</au><au>Fletcher, J.</au><au>White, C. W.</au><au>Christie, W. H.</au><aucorp>Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Melting phenomena and pulsed-laser annealing in semiconductors</atitle><jtitle>J. Appl. 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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1981-12, Vol.52 (12), p.7121-7128 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23721136 |
| source | AIP Digital Archive |
| subjects | 360605 - Materials- Radiation Effects AMORPHOUS STATE ANNEALING BORON COMPARATIVE EVALUATIONS CRYSTAL DEFECTS CRYSTAL STRUCTURE DAMAGE DATA DISLOCATIONS DISSOLUTION DISTRIBUTION ELECTRON MICROSCOPY ELEMENTS EXPERIMENTAL DATA HEAT TREATMENTS HEATING INFORMATION LASER-RADIATION HEATING LAYERS LINE DEFECTS MATERIALS MATERIALS SCIENCE MELTING MICROSCOPY NUMERICAL DATA PHASE TRANSFORMATIONS PLASMA HEATING PULSES SEMICONDUCTOR MATERIALS SEMIMETALS SILICON SPATIAL DISTRIBUTION |
| title | Melting phenomena and pulsed-laser annealing in semiconductors |
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