Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)

A method to determine the flat-band voltage, V FB , in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bi...

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Veröffentlicht in:	JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE 1992-09, Vol.31 (9A), p.2678-2681
Hauptverfasser:	Lyu, Jong-Son, Lee, Kee-Soo Nam
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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