Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)
A method to determine the flat-band voltage, V FB , in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bi...
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| Veröffentlicht in: | JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE 1992-09, Vol.31 (9A), p.2678-2681 |
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| container_issue | 9A |
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| container_title | JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE |
| container_volume | 31 |
| creator | Lyu, Jong-Son Lee, Kee-Soo Nam |
| description | A method to determine the flat-band voltage,
V
FB
, in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bias. This method is very useful for fully depleted SOI MOSFET's with a low channel dopant concentration. Mean values of
V
FB
's obtained from this method were -0.79 V for n
+
polysilicon gate SOI n-MOSFET's with a gate oxide of 205 Å and an acceptor concentration of 4×10
15
cm
-3
, and -0.12 V for n
+
polysilicon gate SOI p-MOSFET's with a gate oxide of 205 Å and a donor concentration of 5×10
15
cm
-3
. The accuracy in the determination of
V
FB
is mainly dependent on precise evaluations of the front gate oxide thickness, the surface silicon thickness, and the channel dopant concentration. |
| doi_str_mv | 10.1143/jjap.31.2678 |
| format | Article |
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V
FB
, in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bias. This method is very useful for fully depleted SOI MOSFET's with a low channel dopant concentration. Mean values of
V
FB
's obtained from this method were -0.79 V for n
+
polysilicon gate SOI n-MOSFET's with a gate oxide of 205 Å and an acceptor concentration of 4×10
15
cm
-3
, and -0.12 V for n
+
polysilicon gate SOI p-MOSFET's with a gate oxide of 205 Å and a donor concentration of 5×10
15
cm
-3
. The accuracy in the determination of
V
FB
is mainly dependent on precise evaluations of the front gate oxide thickness, the surface silicon thickness, and the channel dopant concentration.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.31.2678</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-09, Vol.31 (9A), p.2678-2681</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-e3953e1b891d07c0482ca01422a3542aeed4bc4f5a1a4f509b7daad516d24ad83</citedby><cites>FETCH-LOGICAL-c388t-e3953e1b891d07c0482ca01422a3542aeed4bc4f5a1a4f509b7daad516d24ad83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4312848$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lyu, Jong-Son</creatorcontrib><creatorcontrib>Lee, Kee-Soo Nam</creatorcontrib><title>Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)</title><title>JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE</title><description>A method to determine the flat-band voltage,
V
FB
, in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bias. This method is very useful for fully depleted SOI MOSFET's with a low channel dopant concentration. Mean values of
V
FB
's obtained from this method were -0.79 V for n
+
polysilicon gate SOI n-MOSFET's with a gate oxide of 205 Å and an acceptor concentration of 4×10
15
cm
-3
, and -0.12 V for n
+
polysilicon gate SOI p-MOSFET's with a gate oxide of 205 Å and a donor concentration of 5×10
15
cm
-3
. The accuracy in the determination of
V
FB
is mainly dependent on precise evaluations of the front gate oxide thickness, the surface silicon thickness, and the channel dopant concentration.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kNtqHDEMhofSQrdp7_oAvihtAvHWp5n1Xoakh4SULaS9HrS2XLx4xtuRpzRP0Veuh4SAkJD0_T9ITfNWirWURn88HOC41nKtuo191qykNhtuRNc-b1ZCKMnNVqmXzSuiQ2271shV8-8KC05DHKHEPLIcWEhQ-B5Gz_7kVOAXEgt5YmFO6Z55PKYq8Ixiii6PvEYcaa6aypze7a7P2IAFEs9_o0dOOCyYn92yDxGT5xgCusLKBCNFqnNip992d58__fhAZ6-bFwES4ZvHetL8rIvLr_x29-X68uKWO21t4ai3rUa5t1vpxcYJY5UDIY1SoFujANGbvTOhBQk1i-1-4wF8KzuvDHirT5r3D77HKf-ekUo_RHKYEoyYZ-qV7rrOqgU8fwDdlIkmDP1xigNM970U_fL1_ubm4nuvZb98veLvHn2BHKRQj3SRnjRGS2WN1f8BvuCEdg</recordid><startdate>19920901</startdate><enddate>19920901</enddate><creator>Lyu, Jong-Son</creator><creator>Lee, Kee-Soo Nam</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19920901</creationdate><title>Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)</title><author>Lyu, Jong-Son ; Lee, Kee-Soo Nam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-e3953e1b891d07c0482ca01422a3542aeed4bc4f5a1a4f509b7daad516d24ad83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lyu, Jong-Son</creatorcontrib><creatorcontrib>Lee, Kee-Soo Nam</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lyu, Jong-Son</au><au>Lee, Kee-Soo Nam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)</atitle><jtitle>JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE</jtitle><date>1992-09-01</date><risdate>1992</risdate><volume>31</volume><issue>9A</issue><spage>2678</spage><epage>2681</epage><pages>2678-2681</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>A method to determine the flat-band voltage,
V
FB
, in silicon-on-insulator (SOI) metal-oxide semiconductor (MOS) structures has been proposed. It is based on the measurement of the back channel threshold voltages of SOI MOS field-effect transistors (MOSFET's) as a function of the front gate bias. This method is very useful for fully depleted SOI MOSFET's with a low channel dopant concentration. Mean values of
V
FB
's obtained from this method were -0.79 V for n
+
polysilicon gate SOI n-MOSFET's with a gate oxide of 205 Å and an acceptor concentration of 4×10
15
cm
-3
, and -0.12 V for n
+
polysilicon gate SOI p-MOSFET's with a gate oxide of 205 Å and a donor concentration of 5×10
15
cm
-3
. The accuracy in the determination of
V
FB
is mainly dependent on precise evaluations of the front gate oxide thickness, the surface silicon thickness, and the channel dopant concentration.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.31.2678</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-09, Vol.31 (9A), p.2678-2681 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23666828 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's) |
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