Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films
We discuss the approaches to reactive d.c. sputtering and a criterion for the conditions which allow both the sputtering of metal at the target and the oxidation of the growing film on the substrate. Using this criterion stoichiometric deposition of the oxides of titanium and tantalum can be perform...
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| Veröffentlicht in: | Thin solid films 1979-11, Vol.63 (2), p.369-375 |
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| container_issue | 2 |
| container_start_page | 369 |
| container_title | Thin solid films |
| container_volume | 63 |
| creator | Schiller, S. Heisig, U. Steinfelder, K. Strümpfel, J. |
| description | We discuss the approaches to reactive d.c. sputtering and a criterion for the conditions which allow both the sputtering of metal at the target and the oxidation of the growing film on the substrate. Using this criterion stoichiometric deposition of the oxides of titanium and tantalum can be performed in the d.c. mode at maximum rates of 680 and 1050 nm min
-1 respectively. With respect to a given power, up to 55% or 85% of the possible maximum rates in pure argon may thus be converted into oxides. Some properties of the Ta
2O
5 and TiO
2 films produced are given. |
| doi_str_mv | 10.1016/0040-6090(79)90042-7 |
| format | Article |
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| title | Reactive D.C. sputtering with the magnetron-plasmatron for tantalum pentoxide and titanium dioxide films |
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