Reduction of radiation induced soft error rates in devices utilizing localized state charge storage
It is shown that for semiconductor memory devices utilizing charge storage in localized states it is possible to achieve a high degree of immunity to soft errors. This is accomplished by the application of an electric field which is strong enough to efficiently remove carriers produced by radiation...
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| Veröffentlicht in: | Applied physics letters 1982-01, Vol.40 (1), p.75-77 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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