Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor
Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseody...
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| Veröffentlicht in: | Journal of materials science 2019-12, Vol.54 (24), p.14778-14786 |
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| creator | Lu, Kuankuan Yao, Rihui Wang, Yiping Ning, Honglong Guo, Dong Liu, Xianzhe Tao, Ruiqiang Xu, Miao Wang, Lei Peng, Junbiao |
| description | Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseodymium (Pr) dopant as a stabilizer in amorphous indium zinc oxide semiconductor (IZO) with high mobility and stability. Meanwhile, the PrIZO TFTs were fabricated to investigate the effects of Pr on electrical properties, stability and aging effect. The optimal PrIZO TFT exhibited a desired performance with a saturation mobility (
μ
sat
) of 25.8/32.6 cm
2
V
−1
s
−1
, an
I
on
/
I
off
ratio of 3.5 × 10
7
/5.4 × 10
7
, a subthreshold swing value of 0.14/0.13 V dec
−1
and a threshold voltage (
V
th
) of 2.9/2.1 V, respectively, before and after an air environment storage period of 90 days without passivation layer, which exhibits lower sensitivity of the channel region to oxygen/moisture from the atmosphere than IZO TFT. XRD analysis revealed that the Pr dopant had no effect on the amorphous state of IZO thin film with annealing up to 400 °C. XPS analyses suggested that the fraction of oxygen vacancy subpeak decreased significantly with Pr incorporated into IZO. The μ-PCD decay analyzation and the subgap density of states indicate that acceptor-like trap states induced by Pr ions lead to the suppression of ambient-induced excess carrier in conduction band. This work is anticipated to provide a kind of reliable stabilizer for amorphous oxide semiconductor without deteriorating mobility significantly. |
| doi_str_mv | 10.1007/s10853-019-03941-7 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_miscellaneous_2352431221</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A600709430</galeid><sourcerecordid>A600709430</sourcerecordid><originalsourceid>FETCH-LOGICAL-c453t-a51e4f19a9d7f4e39c2d0624e34ac38eb9ce538f1e3283dc51a02fe4f19a66563</originalsourceid><addsrcrecordid>eNp9kk1rFTEUhoMoeK3-ga4CbnSRms_JzLKUqhcKhVY3bkKaORlzmUmuyQy0_97cTsFeEckiWTzPS87hReiU0TNGqf5UGG2VIJR1hIpOMqJfoA1TWhDZUvESbSjlnHDZsNfoTSk7SqnSnG3Q7tJ7cHPByeN9tgVS_zCFZcJ92oc44BTx_BMwjBXKwdmxUmkPeQ5QsI09tsMBg8eUQ8g2_ojX1QmR-DBOeM42llDmlN-iV96OBd493Sfo--fLbxdfydX1l-3F-RVxUomZWMVAetbZrtdegugc72nD60taJ1q46xwo0XoGgreid4pZyv2qNI1qxAn6sObWn_5aoMxmCsXBONoIaSmGC8WlYJyzir7_C92lJcf6O8O51lrJ7jk12BFMiD7Vodwh1Jw3dfu0k4JW6uwfVD09TMGlCHUdcCx8PBIqM8P9PNilFLO9vTlm-cq6nErJ4M0-h8nmB8OoOTTArA0wtQHmsQFGV0msUqlwHCD_me4_1m86o7Fj</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2277754921</pqid></control><display><type>article</type><title>Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor</title><source>SpringerLink Journals - AutoHoldings</source><creator>Lu, Kuankuan ; Yao, Rihui ; Wang, Yiping ; Ning, Honglong ; Guo, Dong ; Liu, Xianzhe ; Tao, Ruiqiang ; Xu, Miao ; Wang, Lei ; Peng, Junbiao</creator><creatorcontrib>Lu, Kuankuan ; Yao, Rihui ; Wang, Yiping ; Ning, Honglong ; Guo, Dong ; Liu, Xianzhe ; Tao, Ruiqiang ; Xu, Miao ; Wang, Lei ; Peng, Junbiao</creatorcontrib><description>Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseodymium (Pr) dopant as a stabilizer in amorphous indium zinc oxide semiconductor (IZO) with high mobility and stability. Meanwhile, the PrIZO TFTs were fabricated to investigate the effects of Pr on electrical properties, stability and aging effect. The optimal PrIZO TFT exhibited a desired performance with a saturation mobility (
μ
sat
) of 25.8/32.6 cm
2
V
−1
s
−1
, an
I
on
/
I
off
ratio of 3.5 × 10
7
/5.4 × 10
7
, a subthreshold swing value of 0.14/0.13 V dec
−1
and a threshold voltage (
V
th
) of 2.9/2.1 V, respectively, before and after an air environment storage period of 90 days without passivation layer, which exhibits lower sensitivity of the channel region to oxygen/moisture from the atmosphere than IZO TFT. XRD analysis revealed that the Pr dopant had no effect on the amorphous state of IZO thin film with annealing up to 400 °C. XPS analyses suggested that the fraction of oxygen vacancy subpeak decreased significantly with Pr incorporated into IZO. The μ-PCD decay analyzation and the subgap density of states indicate that acceptor-like trap states induced by Pr ions lead to the suppression of ambient-induced excess carrier in conduction band. This work is anticipated to provide a kind of reliable stabilizer for amorphous oxide semiconductor without deteriorating mobility significantly.</description><identifier>ISSN: 0022-2461</identifier><identifier>EISSN: 1573-4803</identifier><identifier>DOI: 10.1007/s10853-019-03941-7</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>air ; Annealing ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Classical Mechanics ; Conduction bands ; Crystallography and Scattering Methods ; Dielectric films ; Dopants ; electric potential difference ; Electric properties ; Electrical properties ; Electronic Materials ; films (materials) ; Flat panel displays ; Gallium ; Indium ; Indium gallium zinc oxide ; ions ; Materials Science ; oxygen ; Polymer Sciences ; Praseodymium ; Semiconductor devices ; Semiconductors ; Solid Mechanics ; Stability ; stabilizers ; storage time ; Thin film transistors ; Thin films ; Threshold voltage ; Transistors ; X ray photoelectron spectroscopy ; X-ray diffraction ; Zinc oxide ; Zinc oxides</subject><ispartof>Journal of materials science, 2019-12, Vol.54 (24), p.14778-14786</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2019</rights><rights>COPYRIGHT 2019 Springer</rights><rights>Journal of Materials Science is a copyright of Springer, (2019). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c453t-a51e4f19a9d7f4e39c2d0624e34ac38eb9ce538f1e3283dc51a02fe4f19a66563</citedby><cites>FETCH-LOGICAL-c453t-a51e4f19a9d7f4e39c2d0624e34ac38eb9ce538f1e3283dc51a02fe4f19a66563</cites><orcidid>0000-0001-9938-2624 ; 0000-0003-4497-9401 ; 0000-0002-1362-1784 ; 0000-0003-4777-9093 ; 0000-0003-1671-2750 ; 0000-0001-9518-5738 ; 0000-0003-0265-772X ; 0000-0003-2055-8792 ; 0000-0002-4096-3966 ; 0000-0001-6227-9287</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10853-019-03941-7$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10853-019-03941-7$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Lu, Kuankuan</creatorcontrib><creatorcontrib>Yao, Rihui</creatorcontrib><creatorcontrib>Wang, Yiping</creatorcontrib><creatorcontrib>Ning, Honglong</creatorcontrib><creatorcontrib>Guo, Dong</creatorcontrib><creatorcontrib>Liu, Xianzhe</creatorcontrib><creatorcontrib>Tao, Ruiqiang</creatorcontrib><creatorcontrib>Xu, Miao</creatorcontrib><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Peng, Junbiao</creatorcontrib><title>Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor</title><title>Journal of materials science</title><addtitle>J Mater Sci</addtitle><description>Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseodymium (Pr) dopant as a stabilizer in amorphous indium zinc oxide semiconductor (IZO) with high mobility and stability. Meanwhile, the PrIZO TFTs were fabricated to investigate the effects of Pr on electrical properties, stability and aging effect. The optimal PrIZO TFT exhibited a desired performance with a saturation mobility (
μ
sat
) of 25.8/32.6 cm
2
V
−1
s
−1
, an
I
on
/
I
off
ratio of 3.5 × 10
7
/5.4 × 10
7
, a subthreshold swing value of 0.14/0.13 V dec
−1
and a threshold voltage (
V
th
) of 2.9/2.1 V, respectively, before and after an air environment storage period of 90 days without passivation layer, which exhibits lower sensitivity of the channel region to oxygen/moisture from the atmosphere than IZO TFT. XRD analysis revealed that the Pr dopant had no effect on the amorphous state of IZO thin film with annealing up to 400 °C. XPS analyses suggested that the fraction of oxygen vacancy subpeak decreased significantly with Pr incorporated into IZO. The μ-PCD decay analyzation and the subgap density of states indicate that acceptor-like trap states induced by Pr ions lead to the suppression of ambient-induced excess carrier in conduction band. This work is anticipated to provide a kind of reliable stabilizer for amorphous oxide semiconductor without deteriorating mobility significantly.</description><subject>air</subject><subject>Annealing</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Classical Mechanics</subject><subject>Conduction bands</subject><subject>Crystallography and Scattering Methods</subject><subject>Dielectric films</subject><subject>Dopants</subject><subject>electric potential difference</subject><subject>Electric properties</subject><subject>Electrical properties</subject><subject>Electronic Materials</subject><subject>films (materials)</subject><subject>Flat panel displays</subject><subject>Gallium</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>ions</subject><subject>Materials Science</subject><subject>oxygen</subject><subject>Polymer Sciences</subject><subject>Praseodymium</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Solid Mechanics</subject><subject>Stability</subject><subject>stabilizers</subject><subject>storage time</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>X ray photoelectron spectroscopy</subject><subject>X-ray diffraction</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0022-2461</issn><issn>1573-4803</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kk1rFTEUhoMoeK3-ga4CbnSRms_JzLKUqhcKhVY3bkKaORlzmUmuyQy0_97cTsFeEckiWTzPS87hReiU0TNGqf5UGG2VIJR1hIpOMqJfoA1TWhDZUvESbSjlnHDZsNfoTSk7SqnSnG3Q7tJ7cHPByeN9tgVS_zCFZcJ92oc44BTx_BMwjBXKwdmxUmkPeQ5QsI09tsMBg8eUQ8g2_ojX1QmR-DBOeM42llDmlN-iV96OBd493Sfo--fLbxdfydX1l-3F-RVxUomZWMVAetbZrtdegugc72nD60taJ1q46xwo0XoGgreid4pZyv2qNI1qxAn6sObWn_5aoMxmCsXBONoIaSmGC8WlYJyzir7_C92lJcf6O8O51lrJ7jk12BFMiD7Vodwh1Jw3dfu0k4JW6uwfVD09TMGlCHUdcCx8PBIqM8P9PNilFLO9vTlm-cq6nErJ4M0-h8nmB8OoOTTArA0wtQHmsQFGV0msUqlwHCD_me4_1m86o7Fj</recordid><startdate>20191201</startdate><enddate>20191201</enddate><creator>Lu, Kuankuan</creator><creator>Yao, Rihui</creator><creator>Wang, Yiping</creator><creator>Ning, Honglong</creator><creator>Guo, Dong</creator><creator>Liu, Xianzhe</creator><creator>Tao, Ruiqiang</creator><creator>Xu, Miao</creator><creator>Wang, Lei</creator><creator>Peng, Junbiao</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>ISR</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M7S</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PTHSS</scope><scope>7S9</scope><scope>L.6</scope><orcidid>https://orcid.org/0000-0001-9938-2624</orcidid><orcidid>https://orcid.org/0000-0003-4497-9401</orcidid><orcidid>https://orcid.org/0000-0002-1362-1784</orcidid><orcidid>https://orcid.org/0000-0003-4777-9093</orcidid><orcidid>https://orcid.org/0000-0003-1671-2750</orcidid><orcidid>https://orcid.org/0000-0001-9518-5738</orcidid><orcidid>https://orcid.org/0000-0003-0265-772X</orcidid><orcidid>https://orcid.org/0000-0003-2055-8792</orcidid><orcidid>https://orcid.org/0000-0002-4096-3966</orcidid><orcidid>https://orcid.org/0000-0001-6227-9287</orcidid></search><sort><creationdate>20191201</creationdate><title>Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor</title><author>Lu, Kuankuan ; Yao, Rihui ; Wang, Yiping ; Ning, Honglong ; Guo, Dong ; Liu, Xianzhe ; Tao, Ruiqiang ; Xu, Miao ; Wang, Lei ; Peng, Junbiao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c453t-a51e4f19a9d7f4e39c2d0624e34ac38eb9ce538f1e3283dc51a02fe4f19a66563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>air</topic><topic>Annealing</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Classical Mechanics</topic><topic>Conduction bands</topic><topic>Crystallography and Scattering Methods</topic><topic>Dielectric films</topic><topic>Dopants</topic><topic>electric potential difference</topic><topic>Electric properties</topic><topic>Electrical properties</topic><topic>Electronic Materials</topic><topic>films (materials)</topic><topic>Flat panel displays</topic><topic>Gallium</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>ions</topic><topic>Materials Science</topic><topic>oxygen</topic><topic>Polymer Sciences</topic><topic>Praseodymium</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Solid Mechanics</topic><topic>Stability</topic><topic>stabilizers</topic><topic>storage time</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>X ray photoelectron spectroscopy</topic><topic>X-ray diffraction</topic><topic>Zinc oxide</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Kuankuan</creatorcontrib><creatorcontrib>Yao, Rihui</creatorcontrib><creatorcontrib>Wang, Yiping</creatorcontrib><creatorcontrib>Ning, Honglong</creatorcontrib><creatorcontrib>Guo, Dong</creatorcontrib><creatorcontrib>Liu, Xianzhe</creatorcontrib><creatorcontrib>Tao, Ruiqiang</creatorcontrib><creatorcontrib>Xu, Miao</creatorcontrib><creatorcontrib>Wang, Lei</creatorcontrib><creatorcontrib>Peng, Junbiao</creatorcontrib><collection>CrossRef</collection><collection>Gale In Context: Science</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>Engineering Collection</collection><collection>AGRICOLA</collection><collection>AGRICOLA - Academic</collection><jtitle>Journal of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Kuankuan</au><au>Yao, Rihui</au><au>Wang, Yiping</au><au>Ning, Honglong</au><au>Guo, Dong</au><au>Liu, Xianzhe</au><au>Tao, Ruiqiang</au><au>Xu, Miao</au><au>Wang, Lei</au><au>Peng, Junbiao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor</atitle><jtitle>Journal of materials science</jtitle><stitle>J Mater Sci</stitle><date>2019-12-01</date><risdate>2019</risdate><volume>54</volume><issue>24</issue><spage>14778</spage><epage>14786</epage><pages>14778-14786</pages><issn>0022-2461</issn><eissn>1573-4803</eissn><abstract>Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous oxide semiconductor thin-film transistors in the field of flat-panel display. However, the existence of gallium component restricts the enhancement of mobility dramatically. In this study, we report a new praseodymium (Pr) dopant as a stabilizer in amorphous indium zinc oxide semiconductor (IZO) with high mobility and stability. Meanwhile, the PrIZO TFTs were fabricated to investigate the effects of Pr on electrical properties, stability and aging effect. The optimal PrIZO TFT exhibited a desired performance with a saturation mobility (
μ
sat
) of 25.8/32.6 cm
2
V
−1
s
−1
, an
I
on
/
I
off
ratio of 3.5 × 10
7
/5.4 × 10
7
, a subthreshold swing value of 0.14/0.13 V dec
−1
and a threshold voltage (
V
th
) of 2.9/2.1 V, respectively, before and after an air environment storage period of 90 days without passivation layer, which exhibits lower sensitivity of the channel region to oxygen/moisture from the atmosphere than IZO TFT. XRD analysis revealed that the Pr dopant had no effect on the amorphous state of IZO thin film with annealing up to 400 °C. XPS analyses suggested that the fraction of oxygen vacancy subpeak decreased significantly with Pr incorporated into IZO. The μ-PCD decay analyzation and the subgap density of states indicate that acceptor-like trap states induced by Pr ions lead to the suppression of ambient-induced excess carrier in conduction band. This work is anticipated to provide a kind of reliable stabilizer for amorphous oxide semiconductor without deteriorating mobility significantly.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10853-019-03941-7</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-9938-2624</orcidid><orcidid>https://orcid.org/0000-0003-4497-9401</orcidid><orcidid>https://orcid.org/0000-0002-1362-1784</orcidid><orcidid>https://orcid.org/0000-0003-4777-9093</orcidid><orcidid>https://orcid.org/0000-0003-1671-2750</orcidid><orcidid>https://orcid.org/0000-0001-9518-5738</orcidid><orcidid>https://orcid.org/0000-0003-0265-772X</orcidid><orcidid>https://orcid.org/0000-0003-2055-8792</orcidid><orcidid>https://orcid.org/0000-0002-4096-3966</orcidid><orcidid>https://orcid.org/0000-0001-6227-9287</orcidid></addata></record> |
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| ispartof | Journal of materials science, 2019-12, Vol.54 (24), p.14778-14786 |
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| subjects | air Annealing Characterization and Evaluation of Materials Chemistry and Materials Science Classical Mechanics Conduction bands Crystallography and Scattering Methods Dielectric films Dopants electric potential difference Electric properties Electrical properties Electronic Materials films (materials) Flat panel displays Gallium Indium Indium gallium zinc oxide ions Materials Science oxygen Polymer Sciences Praseodymium Semiconductor devices Semiconductors Solid Mechanics Stability stabilizers storage time Thin film transistors Thin films Threshold voltage Transistors X ray photoelectron spectroscopy X-ray diffraction Zinc oxide Zinc oxides |
| title | Effects of praseodymium doping on the electrical properties and aging effect of InZnO thin-film transistor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T00%3A32%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20praseodymium%20doping%20on%20the%20electrical%20properties%20and%20aging%20effect%20of%20InZnO%20thin-film%20transistor&rft.jtitle=Journal%20of%20materials%20science&rft.au=Lu,%20Kuankuan&rft.date=2019-12-01&rft.volume=54&rft.issue=24&rft.spage=14778&rft.epage=14786&rft.pages=14778-14786&rft.issn=0022-2461&rft.eissn=1573-4803&rft_id=info:doi/10.1007/s10853-019-03941-7&rft_dat=%3Cgale_proqu%3EA600709430%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2277754921&rft_id=info:pmid/&rft_galeid=A600709430&rfr_iscdi=true |