Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication
A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, ∼41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and shee...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1982-11, Vol.41 (10), p.938-940 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | Lowndes, D. H. Cleland, J. W. Christie, W. H. Eby, R. E. Jellison, G. E. Narayan, J. Westbrook, R. D. Wood, R. F. Nilson, J. A. Dass, S. C. |
| description | A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, ∼41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics. |
| doi_str_mv | 10.1063/1.93342 |
| format | Article |
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H. ; Cleland, J. W. ; Christie, W. H. ; Eby, R. E. ; Jellison, G. E. ; Narayan, J. ; Westbrook, R. D. ; Wood, R. F. ; Nilson, J. A. ; Dass, S. C.</creator><creatorcontrib>Lowndes, D. H. ; Cleland, J. W. ; Christie, W. H. ; Eby, R. E. ; Jellison, G. E. ; Narayan, J. ; Westbrook, R. D. ; Wood, R. F. ; Nilson, J. A. ; Dass, S. C. ; Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</creatorcontrib><description>A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, ∼41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.93342</identifier><language>eng</language><publisher>United States</publisher><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion ; ANNEALING ; ARSENIC IONS ; BORON IONS ; CHARGED PARTICLES ; CHLORIDES ; CHLORINE COMPOUNDS ; DIRECT ENERGY CONVERTERS ; ELECTRICAL PROPERTIES ; ELECTROMAGNETIC RADIATION ; ELECTRON MICROSCOPY ; FABRICATION ; GAS LASERS ; HALIDES ; HALOGEN COMPOUNDS ; HEAT TREATMENTS ; HEATING ; ION IMPLANTATION ; IONS ; LASER-RADIATION HEATING ; LASERS ; MATHEMATICAL MODELS ; MELTING ; MICROSCOPY ; PHASE TRANSFORMATIONS ; PHOTOELECTRIC CELLS ; PHOTOELECTROMAGNETIC EFFECTS ; PHOTOVOLTAIC CELLS ; PHOTOVOLTAIC EFFECT ; PHYSICAL PROPERTIES ; PLASMA HEATING ; PULSES ; RADIATIONS ; RARE GAS COMPOUNDS ; SILICON SOLAR CELLS ; SOLAR CELLS ; SOLAR ENERGY ; SOLAR EQUIPMENT ; TRANSMISSION ELECTRON MICROSCOPY ; ULTRAVIOLET RADIATION ; XENON CHLORIDES ; XENON COMPOUNDS</subject><ispartof>Appl. 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E.</creatorcontrib><creatorcontrib>Narayan, J.</creatorcontrib><creatorcontrib>Westbrook, R. D.</creatorcontrib><creatorcontrib>Wood, R. F.</creatorcontrib><creatorcontrib>Nilson, J. A.</creatorcontrib><creatorcontrib>Dass, S. C.</creatorcontrib><creatorcontrib>Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</creatorcontrib><title>Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication</title><title>Appl. Phys. Lett.; (United States)</title><description>A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, ∼41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.</description><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion</subject><subject>ANNEALING</subject><subject>ARSENIC IONS</subject><subject>BORON IONS</subject><subject>CHARGED PARTICLES</subject><subject>CHLORIDES</subject><subject>CHLORINE COMPOUNDS</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTROMAGNETIC RADIATION</subject><subject>ELECTRON MICROSCOPY</subject><subject>FABRICATION</subject><subject>GAS LASERS</subject><subject>HALIDES</subject><subject>HALOGEN COMPOUNDS</subject><subject>HEAT TREATMENTS</subject><subject>HEATING</subject><subject>ION IMPLANTATION</subject><subject>IONS</subject><subject>LASER-RADIATION HEATING</subject><subject>LASERS</subject><subject>MATHEMATICAL MODELS</subject><subject>MELTING</subject><subject>MICROSCOPY</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOELECTROMAGNETIC EFFECTS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>PHOTOVOLTAIC EFFECT</subject><subject>PHYSICAL PROPERTIES</subject><subject>PLASMA HEATING</subject><subject>PULSES</subject><subject>RADIATIONS</subject><subject>RARE GAS COMPOUNDS</subject><subject>SILICON SOLAR CELLS</subject><subject>SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>SOLAR EQUIPMENT</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>ULTRAVIOLET RADIATION</subject><subject>XENON CHLORIDES</subject><subject>XENON COMPOUNDS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNotkEtLQzEQhYMoWKv4F4ILXV3No_flToovKOii-zB3ktjIbVKTFNRfb9q6mcNwPmYOh5BLzm45a-Qdv-2lnIkjMuGsbSvJeXdMJowxWTV9zU_JWUqfZa2FlBOi37djMpqab3RrE-kIqUzw3sDo_AcNlrrgqVtvRvC5gMmNDoO_p_MVRMBsovuFvGPAFzeMECmacaQWhuhwb52TEwvlzcW_Tsny6XE5f6kWb8-v84dFhaKTubIddHromtaWaIjS6LYBYXAYEDivZ02PtmeysRoYE9oIiQwZ0wy55gBySq4OZ0PKTiV02eCqZPUGs2rZrOtbUaDrA7SJ4WtrUlZrl3aBwZuwTUrIWoi6bwp4cwAxhpSisWoT3Rrij-JM7ZpWXO2bln-TyHGO</recordid><startdate>19821115</startdate><enddate>19821115</enddate><creator>Lowndes, D. 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H.</creatorcontrib><creatorcontrib>Cleland, J. W.</creatorcontrib><creatorcontrib>Christie, W. H.</creatorcontrib><creatorcontrib>Eby, R. E.</creatorcontrib><creatorcontrib>Jellison, G. E.</creatorcontrib><creatorcontrib>Narayan, J.</creatorcontrib><creatorcontrib>Westbrook, R. D.</creatorcontrib><creatorcontrib>Wood, R. F.</creatorcontrib><creatorcontrib>Nilson, J. A.</creatorcontrib><creatorcontrib>Dass, S. C.</creatorcontrib><creatorcontrib>Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lowndes, D. H.</au><au>Cleland, J. W.</au><au>Christie, W. H.</au><au>Eby, R. E.</au><au>Jellison, G. E.</au><au>Narayan, J.</au><au>Westbrook, R. D.</au><au>Wood, R. F.</au><au>Nilson, J. A.</au><au>Dass, S. C.</au><aucorp>Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1982-11-15</date><risdate>1982</risdate><volume>41</volume><issue>10</issue><spage>938</spage><epage>940</epage><pages>938-940</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A pulsed ultraviolet excimer laser (XeCl, 308-nm wavelength, ∼41-ns pulse duration) has been sucessfully used for laser annealing of both boron- and arsenic-implanted silicon, and for formation of high quality p-n junctions. Transmission electron microscopy, secondary ion mass spectroscopy, and sheet electrical properties measurements are used to characterize ion implanted and XeCl laser annealed specimens. Predictions of thermal melting model calculations of the annealing process are also compared with results of these measurements. Finally, we demonstrate the first use of high repetition rate, scanned, overlapping excimer laser pulses to fabricate large area photovoltaic solar cells with good performance characteristics.</abstract><cop>United States</cop><doi>10.1063/1.93342</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1982-11, Vol.41 (10), p.938-940 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | 140501 - Solar Energy Conversion- Photovoltaic Conversion ANNEALING ARSENIC IONS BORON IONS CHARGED PARTICLES CHLORIDES CHLORINE COMPOUNDS DIRECT ENERGY CONVERTERS ELECTRICAL PROPERTIES ELECTROMAGNETIC RADIATION ELECTRON MICROSCOPY FABRICATION GAS LASERS HALIDES HALOGEN COMPOUNDS HEAT TREATMENTS HEATING ION IMPLANTATION IONS LASER-RADIATION HEATING LASERS MATHEMATICAL MODELS MELTING MICROSCOPY PHASE TRANSFORMATIONS PHOTOELECTRIC CELLS PHOTOELECTROMAGNETIC EFFECTS PHOTOVOLTAIC CELLS PHOTOVOLTAIC EFFECT PHYSICAL PROPERTIES PLASMA HEATING PULSES RADIATIONS RARE GAS COMPOUNDS SILICON SOLAR CELLS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT TRANSMISSION ELECTRON MICROSCOPY ULTRAVIOLET RADIATION XENON CHLORIDES XENON COMPOUNDS |
| title | Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication |
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