Photoluminescence and infrared absorption studies of liquid encapsulated Czochralski-grown InP single crystals

Photoluminescence and infrared absorption studies of liquid encapsulated Czochralski-grown InP single crystals

Photoluminescence and infrared absorption in liquid encapsulated Czochralski-grown InP single crystals are discussed. Photoluminescence intensities, intensity ratio, and half-width due to donor-valence band and conduction band-acceptor transitions are clarified at 77 K as functions of carrier concen...

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Veröffentlicht in:Journal of applied physics 1982-01, Vol.53 (1), p.633-638
Hauptverfasser: Yamaguchi, Masafumi, Yamamoto, Akio, Shinoyama, Seiji, Sugiura, Hideo
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container_title Journal of applied physics
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creator Yamaguchi, Masafumi
Yamamoto, Akio
Shinoyama, Seiji
Sugiura, Hideo
description Photoluminescence and infrared absorption in liquid encapsulated Czochralski-grown InP single crystals are discussed. Photoluminescence intensities, intensity ratio, and half-width due to donor-valence band and conduction band-acceptor transitions are clarified at 77 K as functions of carrier concentration. Acceptor binding energies of Zn, Cd, and Hg impurities are determined. Correlations between free-carrier absorption coefficient and carrier concentration to mobility ratio are also examined. It is concluded that carrier concentration, compensation ratio, and mobility in InP single crystals can be determined nondestructively by combining their photoluminescence and infrared absorption spectroscopies.
doi_str_mv 10.1063/1.329970
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title Photoluminescence and infrared absorption studies of liquid encapsulated Czochralski-grown InP single crystals
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