Ion-implanted In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As lateral PNP transistors

Ion-implanted In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As lateral PNP transistors

Lateral PNP transistors have been realized for the first time in the (In,Ga)As/(In,Al)As heterostructure material system. Be ion implantation has been used to form the emitter and collector junctions. A current gain of 3.8 is obtained up to 200 microamps of collector current for devices with a 1.5 m...

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Veröffentlicht in:IEEE electron device letters 1982-12, Vol.3 (12), p.379-381
Hauptverfasser: Tabatabaie-Alavi, K., Choudhury, A.N.M.M., Alavi, K., Vlcek, J., Slater, N.J., Fonstad, C.G., Cho, A.Y.
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Sprache:eng
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Zusammenfassung:Lateral PNP transistors have been realized for the first time in the (In,Ga)As/(In,Al)As heterostructure material system. Be ion implantation has been used to form the emitter and collector junctions. A current gain of 3.8 is obtained up to 200 microamps of collector current for devices with a 1.5 micron electrical base width. A hole diffusion length of 2 microns in the (In,Ga)As is estimated.
ISSN:0741-3106
DOI:10.1109/EDL.1982.25606