Magnetophotoconductivity of semi-insulating GaAs as a function of etching time
The magnetophotoconductivity of semi-insulating GaAs has been investigated for various etching times. We observed that the carrier lifetime of the illuminated region increases as a function of etching time approaching the bulk lifetime of the non-illuminated region. This was explained on the suggest...
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| Veröffentlicht in: | Solid state communications 1979-01, Vol.29 (8), p.629-631 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The magnetophotoconductivity of semi-insulating GaAs has been investigated for various etching times. We observed that the carrier lifetime of the illuminated region increases as a function of etching time approaching the bulk lifetime of the non-illuminated region. This was explained on the suggestion that the surface recombination centers gradually disappear as the etching time increases. |
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| ISSN: | 0038-1098 1879-2766 |
| DOI: | 10.1016/0038-1098(79)90679-3 |