Mobility of potassium ions in SiO sub 2
A method to measure the mobility of K sup + ions in SiO sub 2 is proposed, based on the triangular voltage sweep technique at temps. greater than 300 Degrees C.
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| Veröffentlicht in: | Journal of applied physics 1979-01, Vol.50 (7), p.4834-4837 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
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| container_end_page | 4837 |
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| container_issue | 7 |
| container_start_page | 4834 |
| container_title | Journal of applied physics |
| container_volume | 50 |
| creator | Hillen, M W Greeuw, G Verweij, J F |
| description | A method to measure the mobility of K sup + ions in SiO sub 2 is proposed, based on the triangular voltage sweep technique at temps. greater than 300 Degrees C. |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1979-01, Vol.50 (7), p.4834-4837 |
| issn | 0021-8979 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23473538 |
| source | AIP Digital Archive |
| title | Mobility of potassium ions in SiO sub 2 |
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