Growth conditions and properties of evaporated semicrystalline silicon layers
Semicrystalline silicon layers 50–100 μm thick were vacuum deposited onto stainless steel and Pyrex glass substrates using an electron beam evaporation process. Because of the ultrahigh deposition rate (20–50 μm min -1) the silicon layers had a columnar structure on substrates that had been previous...
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Veröffentlicht in: | Thin solid films 1979-03, Vol.58 (1), p.89-93 |
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Format: | Artikel |
Sprache: | eng |
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