Millimeter-Wave Device Technology

Millimeter-Wave Device Technology

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques d...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1982-01, Vol.30 (1), p.47-55
Hauptverfasser: Rosen, A., Caulton, M., Stabile, P., Gombar, A.M., Janton, W.M., Wu, C.P., Corboy, J.F., Magee, C.W.
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Diodes
Frequency
Impurities
Ion implantation
Millimeter wave devices
Nonhomogeneous media
Optical device fabrication
Silicon
Substrates
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Beschreibung
Zusammenfassung:We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1982.1131016