Field effect and thermoelectric power on arsenic-doped amorphous silicon

Field effect and thermoelectric power measurements have been made as a function of temp. on a series of As-doped amorphous Si samples prepared by glow discharge decompsistion of silane. At lower temp. field effect screening is by localized states at the Fermi level, whereas at higher temp. it is by...

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Veröffentlicht in:	Journal of electronic materials 1979-01, Vol.8 (1), p.47-56
Hauptverfasser:	Jan, Zimmer S., Bube, Richard H., Knights, John C.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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