Junction Properties of nip and pin Amorphous Si Solar Cells Prepared by a Glow Discharge in Pure Silane

The junction properties of various a·Si solar cell structures have been studied in some detail. Various structures of a·Si solar cells such as pin, nip, pp - n, and nn - p structures were prepared. The nip solar cell gave a conversion efficiency of 6.86% under AMI (100 mW/cm 2 ) insolation through i...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1982-01, Vol.21 (S2), p.219-224
Hauptverfasser:	Taniguchi, Hitoshi, Konagai, Makoto, Lim, Koeng Su, Sichanugrist, Porponth, Komori, Koichiro, Takahashi, Kiyoshi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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