Hot electrons in a GaAs heterolayer at low temperature
The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating i...
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Veröffentlicht in: | Journal of applied physics 1982-10, Vol.53 (10), p.6863-6866 |
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Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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