Hot electrons in a GaAs heterolayer at low temperature
The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating i...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1982-10, Vol.53 (10), p.6863-6866 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6866 |
|---|---|
| container_issue | 10 |
| container_start_page | 6863 |
| container_title | Journal of applied physics |
| container_volume | 53 |
| creator | Price, P J |
| description | The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating is by acoustic-mode phonons, with both deformation and piezoelectric coupling to the electrons. Both ‘‘equipartition’’ and ‘‘Bloch’’ temperature ranges are considered. The assumption of an electron temperature, for the hot distribution, is critically investigated. |
| doi_str_mv | 10.1063/1.330026 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_23418099</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23418099</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-df8e3b152c3b4128439f23b385c647d6781e23fba816a9fd426bc259e67e7ff63</originalsourceid><addsrcrecordid>eNqN0M1KAzEUBeAgCtYq-AhZiZupubmZ_CxL0VYouNF1yKQ3WJl2apIifXsr9QG6OnD4OIvD2D2ICQiNTzBBFELqCzYCYV1j2lZcstGxgsY6467ZTSlfQgBYdCOmF0Pl1FOsedgWvt7ywOdhWvgnVcpDHw6Ueai8H354pc2Ocqj7TLfsKoW-0N1_jtnHy_P7bNEs3-avs-myiWhVbVbJEnbQyoidAmkVuiSxQ9tGrcxKGwskMXXBgg4urZTUXZStI23IpKRxzB5Ou7s8fO-pVL9Zl0h9H7Y07IuXqMAK586Cxih1FtTKwhE-nmDMQymZkt_l9Sbkgwfh_6724E9X4y_Mi25G</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23416481</pqid></control><display><type>article</type><title>Hot electrons in a GaAs heterolayer at low temperature</title><source>AIP Digital Archive</source><creator>Price, P J</creator><creatorcontrib>Price, P J</creatorcontrib><description>The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating is by acoustic-mode phonons, with both deformation and piezoelectric coupling to the electrons. Both ‘‘equipartition’’ and ‘‘Bloch’’ temperature ranges are considered. The assumption of an electron temperature, for the hot distribution, is critically investigated.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.330026</identifier><language>eng</language><ispartof>Journal of applied physics, 1982-10, Vol.53 (10), p.6863-6866</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-df8e3b152c3b4128439f23b385c647d6781e23fba816a9fd426bc259e67e7ff63</citedby><cites>FETCH-LOGICAL-c384t-df8e3b152c3b4128439f23b385c647d6781e23fba816a9fd426bc259e67e7ff63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27907,27908</link.rule.ids></links><search><creatorcontrib>Price, P J</creatorcontrib><title>Hot electrons in a GaAs heterolayer at low temperature</title><title>Journal of applied physics</title><description>The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating is by acoustic-mode phonons, with both deformation and piezoelectric coupling to the electrons. Both ‘‘equipartition’’ and ‘‘Bloch’’ temperature ranges are considered. The assumption of an electron temperature, for the hot distribution, is critically investigated.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNqN0M1KAzEUBeAgCtYq-AhZiZupubmZ_CxL0VYouNF1yKQ3WJl2apIifXsr9QG6OnD4OIvD2D2ICQiNTzBBFELqCzYCYV1j2lZcstGxgsY6467ZTSlfQgBYdCOmF0Pl1FOsedgWvt7ywOdhWvgnVcpDHw6Ueai8H354pc2Ocqj7TLfsKoW-0N1_jtnHy_P7bNEs3-avs-myiWhVbVbJEnbQyoidAmkVuiSxQ9tGrcxKGwskMXXBgg4urZTUXZStI23IpKRxzB5Ou7s8fO-pVL9Zl0h9H7Y07IuXqMAK586Cxih1FtTKwhE-nmDMQymZkt_l9Sbkgwfh_6724E9X4y_Mi25G</recordid><startdate>19821001</startdate><enddate>19821001</enddate><creator>Price, P J</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7U5</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>19821001</creationdate><title>Hot electrons in a GaAs heterolayer at low temperature</title><author>Price, P J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-df8e3b152c3b4128439f23b385c647d6781e23fba816a9fd426bc259e67e7ff63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Price, P J</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Price, P J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hot electrons in a GaAs heterolayer at low temperature</atitle><jtitle>Journal of applied physics</jtitle><date>1982-10-01</date><risdate>1982</risdate><volume>53</volume><issue>10</issue><spage>6863</spage><epage>6866</epage><pages>6863-6866</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The theory of hot electrons is developed for high-mobility GaAs heterolayers at low temperature, where the electron system is two-dimensionally itinerant with a highly degenerate distribution, and the scattering is predominantly elastic. The inelastic scattering which controls the electron heating is by acoustic-mode phonons, with both deformation and piezoelectric coupling to the electrons. Both ‘‘equipartition’’ and ‘‘Bloch’’ temperature ranges are considered. The assumption of an electron temperature, for the hot distribution, is critically investigated.</abstract><doi>10.1063/1.330026</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1982-10, Vol.53 (10), p.6863-6866 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23418099 |
| source | AIP Digital Archive |
| title | Hot electrons in a GaAs heterolayer at low temperature |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T09%3A48%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Hot%20electrons%20in%20a%20GaAs%20heterolayer%20at%20low%20temperature&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Price,%20P%20J&rft.date=1982-10-01&rft.volume=53&rft.issue=10&rft.spage=6863&rft.epage=6866&rft.pages=6863-6866&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.330026&rft_dat=%3Cproquest_cross%3E23418099%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=23416481&rft_id=info:pmid/&rfr_iscdi=true |