The effects of thin film homogeneity on the performance of ferroelectric tunnel junctions
The compelling physical properties of the recently discovered ferroelectric phase in thin film Hf Zr O have opened a window for applications such as non-volatile resistive switching memory devices with high retention known as ferroelectric tunnel junctions. In this article, we investigate the stabil...
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| Veröffentlicht in: | Journal of physics. Condensed matter 2020-05, Vol.32 (18), p.185302-185302 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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