Effects of humidity on stress in thin silicon dioxide films
The stresses of thermally grown as well as chemically vapor deposited (CVD) silicon dioxide were measured by the cantilever beam technique using x-ray diffraction. Thermally grown oxide shows reversible stress changes upon heating or cooling of the films. The linear thermal expansion of such films i...
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| Veröffentlicht in: | Journal of applied physics 1982-01, Vol.53 (6), p.4202-4207 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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