T-Channel Field Effect Transistor with Three InputTerminals (Ti-TcFET)
In this paper, a novel T-channel field effect transistor with three input terminals(Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. Thetop gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channe...
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| Veröffentlicht in: | Micromachines (Basel) 2020-01, Vol.11 (1) |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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