Detection of ionizing radiation by charge storage in shallow levels in semiconductors at cryogenic temperatures

At cryogenic temperatures, ionized impurities act as traps with large capture cross sections. Phosphorus ions in the i-region of a p-i-n diode at 4.2K have been used to trap carriers produced by the passage of Compton electrons and 40 GeV pions. The p-i-n diode acts as a detector and a memory elemen...

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Veröffentlicht in:	IEEE transactions on nuclear science 1982-01, Vol.NS-29 (1), p.728-732
Hauptverfasser:	Chaudhuri, S, Coon, D D, Derkits, G E, Gajewski, W, Shepard, P F
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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