Spectral tuning and linewidth narrowing of shallow junction surface emitting GaAs LED's through gamma -ray irradiation

Spectral tuning and linewidth narrowing of shallow junction surface emitting GaAs LED's through gamma -ray irradiation

Alterations of device characteristics as a result of gamma -ray irradiation of shallow-junction surface emitting devices are different from those of deep-junction devices with respect to LED emission intensity reduction, I-V curve, line shape, and spectral shift. In particular, much larger spectral...

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Veröffentlicht in:IEEE journal of quantum electronics 1983-01, Vol.QE-19 (1), p.29-33
Hauptverfasser: Hirsh, I, Hava, S, Kopeika, N S, Kushelevsky, A P, Alfassi, Z B, Aharoni, H, Polak, M
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container_end_page 33
container_issue 1
container_start_page 29
container_title IEEE journal of quantum electronics
container_volume QE-19
creator Hirsh, I
Hava, S
Kopeika, N S
Kushelevsky, A P
Alfassi, Z B
Aharoni, H
Polak, M
description Alterations of device characteristics as a result of gamma -ray irradiation of shallow-junction surface emitting devices are different from those of deep-junction devices with respect to LED emission intensity reduction, I-V curve, line shape, and spectral shift. In particular, much larger spectral shifts in the opposite direction-toward longer wave-lengths-are reported here than those found in the literature for deep-junction devices. A qualitative model based upon photochemical doping and changes in surface band bending is proposed to explain these phenomena.
doi_str_mv 10.1109/JQE.1983.1071717
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title Spectral tuning and linewidth narrowing of shallow junction surface emitting GaAs LED's through gamma -ray irradiation
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