Direct-coupled GaAs ring oscillators with self-aligned gates

Direct-coupled GaAs ring oscillators with self-aligned gates

The performance of direct-coupled GaAs MESFET ring oscillators having a 1µm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, represe...

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Veröffentlicht in:IEEE electron device letters 1982-11, Vol.3 (11), p.325-326
Hauptverfasser: Kiehl, R.A., Flahive, P.G., Wemple, S.H., Cox, H.M.
Format: Artikel
Sprache:eng
Schlagworte:
FETs
Gallium arsenide
Inverters
Lithography
MESFETs
Plasma temperature
Propagation delay
Ring oscillators
Transconductance
Voltage
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container_end_page 326
container_issue 11
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container_title IEEE electron device letters
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creator Kiehl, R.A.
Flahive, P.G.
Wemple, S.H.
Cox, H.M.
description The performance of direct-coupled GaAs MESFET ring oscillators having a 1µm self-aligned recessed-gate structure defined by optical contact lithography on CVD epitaxial material is reported. Propagation delays as low as 20.9 and 16.1 ps/stage have been achieved at 300 and 77 K, respectively, representing the fastest results reported to date for GaAs ring oscillators having conventional 1-µm gate technology.
doi_str_mv 10.1109/EDL.1982.25588
format Article
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source IEEE Electronic Library (IEL)
subjects FETs
Gallium arsenide
Inverters
Lithography
MESFETs
Plasma temperature
Propagation delay
Ring oscillators
Transconductance
Voltage
title Direct-coupled GaAs ring oscillators with self-aligned gates
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