Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor
Compositional changes adjacent to grain boundaries in heavily degraded samples of a ZnO varistor containing the additives Bi and Co have been observed with the scanning transmission electron microscope. A marked asymmetry in the distribution of Bi and Co with respect to the physical location of the...
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Veröffentlicht in: | J. Appl. Phys.; (United States) 1982-03, Vol.53 (3), p.1765-1768 |
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container_title | J. Appl. Phys.; (United States) |
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creator | Chiang, Yet-Ming Kingery, W. D. Levinson, Lionel M. |
description | Compositional changes adjacent to grain boundaries in heavily degraded samples of a ZnO varistor containing the additives Bi and Co have been observed with the scanning transmission electron microscope. A marked asymmetry in the distribution of Bi and Co with respect to the physical location of the boundary is found, consistent with the accumulation of mobile cations on one side of the boundary under the influence of a dc electric field. |
doi_str_mv | 10.1063/1.331647 |
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fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_proquest_miscellaneous_23349156</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23349156</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-af4a4f389a4a43bcca34b44f1d0d8f27e3c5507938fce7322eed4eeeedc26add3</originalsourceid><addsrcrecordid>eNotkM1LAzEQxYMoWKvgnxA8iJetySb7dZTiFxR60YuXMJvMtinbpCZZwf_elDqXd5jfPN48Qm45W3BWi0e-EILXsjkjM87armiqip2TGWMlL9qu6S7JVYw7xjhvRTcj_dLvDz7aZL2DkeotuA1GCmYHGl2iydNNAOto7ydnINi8NFOwbkNxRJ2C1fnMYIYMHE2oHyjQL7emP5mOyYdrcjHAGPHmX-fk8-X5Y_lWrNav78unVaGF7FIBgwQ5iLaDrKLXGoTspRy4YaYdygaFzq80nWgHjY0oS0QjMY_RZQ3GiDm5O_n6mKyK2ibUW-2dyzFV1eYyJM_Q_Qk6BP89YUxqb6PGcQSHfoqqFDkMr-oMPpxAHXyMAQd1CHYP4Vdxpo5NK65OTYs_RM9yJg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23349156</pqid></control><display><type>article</type><title>Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor</title><source>AIP Digital Archive</source><creator>Chiang, Yet-Ming ; Kingery, W. D. ; Levinson, Lionel M.</creator><creatorcontrib>Chiang, Yet-Ming ; Kingery, W. D. ; Levinson, Lionel M. ; Ceramics Division, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</creatorcontrib><description>Compositional changes adjacent to grain boundaries in heavily degraded samples of a ZnO varistor containing the additives Bi and Co have been observed with the scanning transmission electron microscope. A marked asymmetry in the distribution of Bi and Co with respect to the physical location of the boundary is found, consistent with the accumulation of mobile cations on one side of the boundary under the influence of a dc electric field.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.331647</identifier><language>eng</language><publisher>United States</publisher><subject>360602 - Other Materials- Structure & Phase Studies ; ALLOYS ; BISMUTH ADDITIONS ; BISMUTH ALLOYS ; CATIONS ; CHALCOGENIDES ; CHARGED PARTICLES ; COBALT ADDITIONS ; COBALT ALLOYS ; CRYSTAL STRUCTURE ; CURRENTS ; DIRECT CURRENT ; DISTRIBUTION ; ELECTRIC CURRENTS ; ELECTRIC FIELDS ; ELECTRICAL EQUIPMENT ; ELECTRON MICROSCOPY ; GRAIN BOUNDARIES ; IONS ; MATERIALS SCIENCE ; MICROSCOPY ; MICROSTRUCTURE ; OXIDES ; OXYGEN COMPOUNDS ; QUANTITY RATIO ; RESISTORS ; SCANNING ELECTRON MICROSCOPY ; SEMICONDUCTOR DEVICES ; SEMICONDUCTOR RESISTORS ; SPATIAL DISTRIBUTION ; TRANSMISSION ELECTRON MICROSCOPY ; ZINC COMPOUNDS ; ZINC OXIDES</subject><ispartof>J. Appl. Phys.; (United States), 1982-03, Vol.53 (3), p.1765-1768</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-af4a4f389a4a43bcca34b44f1d0d8f27e3c5507938fce7322eed4eeeedc26add3</citedby><cites>FETCH-LOGICAL-c349t-af4a4f389a4a43bcca34b44f1d0d8f27e3c5507938fce7322eed4eeeedc26add3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/5808941$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Chiang, Yet-Ming</creatorcontrib><creatorcontrib>Kingery, W. D.</creatorcontrib><creatorcontrib>Levinson, Lionel M.</creatorcontrib><creatorcontrib>Ceramics Division, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</creatorcontrib><title>Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor</title><title>J. Appl. Phys.; (United States)</title><description>Compositional changes adjacent to grain boundaries in heavily degraded samples of a ZnO varistor containing the additives Bi and Co have been observed with the scanning transmission electron microscope. A marked asymmetry in the distribution of Bi and Co with respect to the physical location of the boundary is found, consistent with the accumulation of mobile cations on one side of the boundary under the influence of a dc electric field.</description><subject>360602 - Other Materials- Structure & Phase Studies</subject><subject>ALLOYS</subject><subject>BISMUTH ADDITIONS</subject><subject>BISMUTH ALLOYS</subject><subject>CATIONS</subject><subject>CHALCOGENIDES</subject><subject>CHARGED PARTICLES</subject><subject>COBALT ADDITIONS</subject><subject>COBALT ALLOYS</subject><subject>CRYSTAL STRUCTURE</subject><subject>CURRENTS</subject><subject>DIRECT CURRENT</subject><subject>DISTRIBUTION</subject><subject>ELECTRIC CURRENTS</subject><subject>ELECTRIC FIELDS</subject><subject>ELECTRICAL EQUIPMENT</subject><subject>ELECTRON MICROSCOPY</subject><subject>GRAIN BOUNDARIES</subject><subject>IONS</subject><subject>MATERIALS SCIENCE</subject><subject>MICROSCOPY</subject><subject>MICROSTRUCTURE</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>QUANTITY RATIO</subject><subject>RESISTORS</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR RESISTORS</subject><subject>SPATIAL DISTRIBUTION</subject><subject>TRANSMISSION ELECTRON MICROSCOPY</subject><subject>ZINC COMPOUNDS</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNotkM1LAzEQxYMoWKvgnxA8iJetySb7dZTiFxR60YuXMJvMtinbpCZZwf_elDqXd5jfPN48Qm45W3BWi0e-EILXsjkjM87armiqip2TGWMlL9qu6S7JVYw7xjhvRTcj_dLvDz7aZL2DkeotuA1GCmYHGl2iydNNAOto7ydnINi8NFOwbkNxRJ2C1fnMYIYMHE2oHyjQL7emP5mOyYdrcjHAGPHmX-fk8-X5Y_lWrNav78unVaGF7FIBgwQ5iLaDrKLXGoTspRy4YaYdygaFzq80nWgHjY0oS0QjMY_RZQ3GiDm5O_n6mKyK2ibUW-2dyzFV1eYyJM_Q_Qk6BP89YUxqb6PGcQSHfoqqFDkMr-oMPpxAHXyMAQd1CHYP4Vdxpo5NK65OTYs_RM9yJg</recordid><startdate>19820301</startdate><enddate>19820301</enddate><creator>Chiang, Yet-Ming</creator><creator>Kingery, W. D.</creator><creator>Levinson, Lionel M.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>19820301</creationdate><title>Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor</title><author>Chiang, Yet-Ming ; Kingery, W. D. ; Levinson, Lionel M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-af4a4f389a4a43bcca34b44f1d0d8f27e3c5507938fce7322eed4eeeedc26add3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>360602 - Other Materials- Structure & Phase Studies</topic><topic>ALLOYS</topic><topic>BISMUTH ADDITIONS</topic><topic>BISMUTH ALLOYS</topic><topic>CATIONS</topic><topic>CHALCOGENIDES</topic><topic>CHARGED PARTICLES</topic><topic>COBALT ADDITIONS</topic><topic>COBALT ALLOYS</topic><topic>CRYSTAL STRUCTURE</topic><topic>CURRENTS</topic><topic>DIRECT CURRENT</topic><topic>DISTRIBUTION</topic><topic>ELECTRIC CURRENTS</topic><topic>ELECTRIC FIELDS</topic><topic>ELECTRICAL EQUIPMENT</topic><topic>ELECTRON MICROSCOPY</topic><topic>GRAIN BOUNDARIES</topic><topic>IONS</topic><topic>MATERIALS SCIENCE</topic><topic>MICROSCOPY</topic><topic>MICROSTRUCTURE</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>QUANTITY RATIO</topic><topic>RESISTORS</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR RESISTORS</topic><topic>SPATIAL DISTRIBUTION</topic><topic>TRANSMISSION ELECTRON MICROSCOPY</topic><topic>ZINC COMPOUNDS</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chiang, Yet-Ming</creatorcontrib><creatorcontrib>Kingery, W. D.</creatorcontrib><creatorcontrib>Levinson, Lionel M.</creatorcontrib><creatorcontrib>Ceramics Division, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chiang, Yet-Ming</au><au>Kingery, W. D.</au><au>Levinson, Lionel M.</au><aucorp>Ceramics Division, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1982-03-01</date><risdate>1982</risdate><volume>53</volume><issue>3</issue><spage>1765</spage><epage>1768</epage><pages>1765-1768</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Compositional changes adjacent to grain boundaries in heavily degraded samples of a ZnO varistor containing the additives Bi and Co have been observed with the scanning transmission electron microscope. A marked asymmetry in the distribution of Bi and Co with respect to the physical location of the boundary is found, consistent with the accumulation of mobile cations on one side of the boundary under the influence of a dc electric field.</abstract><cop>United States</cop><doi>10.1063/1.331647</doi><tpages>4</tpages></addata></record> |
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ispartof | J. Appl. Phys.; (United States), 1982-03, Vol.53 (3), p.1765-1768 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_proquest_miscellaneous_23349156 |
source | AIP Digital Archive |
subjects | 360602 - Other Materials- Structure & Phase Studies ALLOYS BISMUTH ADDITIONS BISMUTH ALLOYS CATIONS CHALCOGENIDES CHARGED PARTICLES COBALT ADDITIONS COBALT ALLOYS CRYSTAL STRUCTURE CURRENTS DIRECT CURRENT DISTRIBUTION ELECTRIC CURRENTS ELECTRIC FIELDS ELECTRICAL EQUIPMENT ELECTRON MICROSCOPY GRAIN BOUNDARIES IONS MATERIALS SCIENCE MICROSCOPY MICROSTRUCTURE OXIDES OXYGEN COMPOUNDS QUANTITY RATIO RESISTORS SCANNING ELECTRON MICROSCOPY SEMICONDUCTOR DEVICES SEMICONDUCTOR RESISTORS SPATIAL DISTRIBUTION TRANSMISSION ELECTRON MICROSCOPY ZINC COMPOUNDS ZINC OXIDES |
title | Compositional changes adjacent to grain boundaries during electrical degradation of a ZnO varistor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T19%3A55%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Compositional%20changes%20adjacent%20to%20grain%20boundaries%20during%20electrical%20degradation%20of%20a%20ZnO%20varistor&rft.jtitle=J.%20Appl.%20Phys.;%20(United%20States)&rft.au=Chiang,%20Yet-Ming&rft.aucorp=Ceramics%20Division,%20Department%20of%20Materials%20Science%20and%20Engineering,%20Massachusetts%20Institute%20of%20Technology,%20Cambridge,%20Massachusetts%2002139&rft.date=1982-03-01&rft.volume=53&rft.issue=3&rft.spage=1765&rft.epage=1768&rft.pages=1765-1768&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.331647&rft_dat=%3Cproquest_osti_%3E23349156%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=23349156&rft_id=info:pmid/&rfr_iscdi=true |