Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers

An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero-order transverse mode to output powers of 10 mW is described. A correlation between zero-order mode power and substrate-induced optical loss is demonstrated. The devices fabricated have threshold curren...

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Veröffentlicht in:	J. Appl. Phys.; (United States) 1982-05, Vol.53 (5), p.3444-3449
Hauptverfasser:	Curtis, J. P., Plumb, R. G., Goodwin, A. R., Kirkby, P. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	420300 - Engineering- Lasers- (-1989) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COMMUNICATIONS COMPARATIVE EVALUATIONS COMPUTERIZED SIMULATION DATA ENGINEERING EXPERIMENTAL DATA FABRICATION FUNCTIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS LIFETIME MATHEMATICAL MODELS NUMERICAL DATA OPTIMIZATION OSCILLATION MODES PNICTIDES RESPONSE FUNCTIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SIMULATION SUBSTRATES TRANSIENTS
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