Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers
An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero-order transverse mode to output powers of 10 mW is described. A correlation between zero-order mode power and substrate-induced optical loss is demonstrated. The devices fabricated have threshold curren...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1982-05, Vol.53 (5), p.3444-3449 |
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| container_issue | 5 |
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| container_title | J. Appl. Phys.; (United States) |
| container_volume | 53 |
| creator | Curtis, J. P. Plumb, R. G. Goodwin, A. R. Kirkby, P. A. |
| description | An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero-order transverse mode to output powers of 10 mW is described. A correlation between zero-order mode power and substrate-induced optical loss is demonstrated. The devices fabricated have threshold currents around 30 mA, highly linear transfer characteristics, and exhibit quasisingle longitudinal mode behavior. Transient response measurements show device suitability for G bit/s optical communication systems. Preliminary lifetest results indicate a median life of over 10 000 h at 70 °C and 2-mW output. A computer model of liquid phase epitaxial growth over channels and a theoretical analysis of the waveguide structure grown show good agreement with experiment. |
| doi_str_mv | 10.1063/1.331162 |
| format | Article |
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A.</creatorcontrib><creatorcontrib>Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England, CM17 9NA</creatorcontrib><title>Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers</title><title>J. Appl. Phys.; (United States)</title><description>An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero-order transverse mode to output powers of 10 mW is described. A correlation between zero-order mode power and substrate-induced optical loss is demonstrated. The devices fabricated have threshold currents around 30 mA, highly linear transfer characteristics, and exhibit quasisingle longitudinal mode behavior. Transient response measurements show device suitability for G bit/s optical communication systems. Preliminary lifetest results indicate a median life of over 10 000 h at 70 °C and 2-mW output. 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P.</creatorcontrib><creatorcontrib>Plumb, R. G.</creatorcontrib><creatorcontrib>Goodwin, A. R.</creatorcontrib><creatorcontrib>Kirkby, P. A.</creatorcontrib><creatorcontrib>Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England, CM17 9NA</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Curtis, J. P.</au><au>Plumb, R. G.</au><au>Goodwin, A. R.</au><au>Kirkby, P. A.</au><aucorp>Standard Telecommunication Laboratories Limited, London Road, Harlow, Essex, England, CM17 9NA</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1982-05-01</date><risdate>1982</risdate><volume>53</volume><issue>5</issue><spage>3444</spage><epage>3449</epage><pages>3444-3449</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>An optimization of channeled substrate narrow stripe GaAs/GaAlAs lasers for operation in the zero-order transverse mode to output powers of 10 mW is described. A correlation between zero-order mode power and substrate-induced optical loss is demonstrated. The devices fabricated have threshold currents around 30 mA, highly linear transfer characteristics, and exhibit quasisingle longitudinal mode behavior. Transient response measurements show device suitability for G bit/s optical communication systems. Preliminary lifetest results indicate a median life of over 10 000 h at 70 °C and 2-mW output. A computer model of liquid phase epitaxial growth over channels and a theoretical analysis of the waveguide structure grown show good agreement with experiment.</abstract><cop>United States</cop><doi>10.1063/1.331162</doi><tpages>6</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1982-05, Vol.53 (5), p.3444-3449 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | 420300 - Engineering- Lasers- (-1989) ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS ARSENIC COMPOUNDS ARSENIDES COMMUNICATIONS COMPARATIVE EVALUATIONS COMPUTERIZED SIMULATION DATA ENGINEERING EXPERIMENTAL DATA FABRICATION FUNCTIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION LASERS LIFETIME MATHEMATICAL MODELS NUMERICAL DATA OPTIMIZATION OSCILLATION MODES PNICTIDES RESPONSE FUNCTIONS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SIMULATION SUBSTRATES TRANSIENTS |
| title | Characteristics and analysis of channeled substrate narrow stripe GaAs/GaAlAs lasers |
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