Optically enhanced amorphous silicon solar cells
We describe the first application of optical enhancement to thin-film (∼0.75 μm thick) amorphous silicon solar cells and define cell geometries which maximize enhancement effects. We observed that due to the improved infrared absorption the external AM1 short circuit current increases by 3.0 mA/cm2...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1983-06, Vol.42 (11), p.968-970 |
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| container_end_page | 970 |
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| container_issue | 11 |
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| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 42 |
| creator | Deckman, H. W. Wronski, C. R. Witzke, H. Yablonovitch, E. |
| description | We describe the first application of optical enhancement to thin-film (∼0.75 μm thick) amorphous silicon solar cells and define cell geometries which maximize enhancement effects. We observed that due to the improved infrared absorption the external AM1 short circuit current increases by 3.0 mA/cm2 in cells constructed in accordance with the principles of optical enhancement. |
| doi_str_mv | 10.1063/1.93817 |
| format | Article |
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W.</creatorcontrib><creatorcontrib>Wronski, C. R.</creatorcontrib><creatorcontrib>Witzke, H.</creatorcontrib><creatorcontrib>Yablonovitch, E.</creatorcontrib><creatorcontrib>Exxon Research and Engineering Company, Corporate Research Science Laboratories, P. O. Box 45, Linden, New Jersey 07036</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deckman, H. W.</au><au>Wronski, C. R.</au><au>Witzke, H.</au><au>Yablonovitch, E.</au><aucorp>Exxon Research and Engineering Company, Corporate Research Science Laboratories, P. O. Box 45, Linden, New Jersey 07036</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optically enhanced amorphous silicon solar cells</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1983-06-01</date><risdate>1983</risdate><volume>42</volume><issue>11</issue><spage>968</spage><epage>970</epage><pages>968-970</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We describe the first application of optical enhancement to thin-film (∼0.75 μm thick) amorphous silicon solar cells and define cell geometries which maximize enhancement effects. We observed that due to the improved infrared absorption the external AM1 short circuit current increases by 3.0 mA/cm2 in cells constructed in accordance with the principles of optical enhancement.</abstract><cop>United States</cop><doi>10.1063/1.93817</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1983-06, Vol.42 (11), p.968-970 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_23326586 |
| source | AIP Digital Archive |
| subjects | ABSORPTION AMORPHOUS STATE DATA DIMENSIONS DIRECT ENERGY CONVERTERS ELECTROMAGNETIC RADIATION EXPERIMENTAL DATA GEOMETRY INFORMATION INFRARED RADIATION MATHEMATICS NUMERICAL DATA OPTIMIZATION PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS RADIATION EFFECTS RADIATIONS SILICON SOLAR CELLS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT 140501 -- Solar Energy Conversion-- Photovoltaic Conversion THICKNESS |
| title | Optically enhanced amorphous silicon solar cells |
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