Increased avalanche breakdown voltage and controlled surface electric fields using a junction termination extension (JTE) technique

Extremely high breakdown voltages with very low leakage current have been achieved in plane and planar p-n junctions by using an ion-implemented junction extension for precise control of the depletion region charge in the junction termination. A theory is presented which shows a greatly improved con...

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Veröffentlicht in:IEEE transactions on electron devices 1983-08, Vol.30 (8), p.954-957
1. Verfasser: Temple, V.A.K.
Format: Artikel
Sprache:eng
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