The structural characteristics of radiation damage produced by high energy (2.7 MeV) ion implantation in GaAs

The radiation damage induced by the implantation of 2.7 MeV P exp + N exp + ions with a dose of 6.4 x 10 exp 16 ions cm exp -3 into GaAs at temperature has been studied by transmission electron microscopy. The as-implanted material was found to consist of a buried amorphous layer which was sandwiche...

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Veröffentlicht in:	Journal of materials science 1978-11, Vol.13 (11), p.2418-2428
Hauptverfasser:	Narayanan, G. H., Spitzer, W. G.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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