Atomic, electronic and transport properties of In-Au 2D compound on Si(100)
Two-dimensional (In, Au)/Si(1 0 0)c(2 x 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurem...
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Veröffentlicht in: | Journal of physics. Condensed matter 2020-03, Vol.32 (13), p.135003-135003, Article 135003 |
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container_title | Journal of physics. Condensed matter |
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creator | Gruznev, D. V. Bondarenko, L. V. Tupchaya, A. Y. Kotlyar, V. G. Utas, O. A. Mihalyuk, A. N. Denisov, N. V. Matetskiy, A. V. Zotov, A. V. Saranin, A. A. |
description | Two-dimensional (In, Au)/Si(1 0 0)c(2 x 2) compound was synthesized and its atomic arrangement, electron band structure and low-temperature transport properties were characterized using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy and four-point-probe resistivity measurements assisted with first-principles density-functional-theory calculations. The present results are compared to those obtained earlier for the parent (Tl, Au)/Si(1 0 0)c(2 x 2) system. |
doi_str_mv | 10.1088/1361-648X/ab5f28 |
format | Article |
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subjects | Physical Sciences Physics Physics, Condensed Matter Science & Technology |
title | Atomic, electronic and transport properties of In-Au 2D compound on Si(100) |
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