Low-temperature quantum magnetotransport of graphene on SiC (0 0 0 1) in pulsed magnetic fields up to 30 T

Resistivity, ρ(T), and magnetoresistance (MR) are investigated in graphene grown on SiC (0 0 0 1), at temperatures between T ~ 4-85 K in pulsed magnetic fields of B up to 30 T. According to the Raman spectroscopy and Kelvin-probe microscopy data, the material is a single-layer graphene containing ~2...

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Veröffentlicht in:	Journal of physics. Condensed matter 2020-03, Vol.32 (11), p.115704-115704
Hauptverfasser:	Lähderanta, E, Lebedev, A A, Shakhov, M A, Stamov, V N, Lisunov, K G, Lebedev, S P
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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