Interfacial Defect-Mediated Near-Infrared Silicon Photodetection with Metal Oxides

Due to recent breakthroughs in silicon photonics, sub-band-gap photodetection in silicon (Si) has become vital to the development of next-generation integrated photonic devices for telecommunication systems. In particular, photodetection in Si using complementary metal-oxide semiconductor (CMOS) com...

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Veröffentlicht in:	ACS applied materials & interfaces 2019-12, Vol.11 (50), p.47516-47524
Hauptverfasser:	Kim, Jongbum, Krayer, Lisa J, Garrett, Joseph L, Munday, Jeremy N
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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