Realization of Both n- and p‑Type GeTe Thermoelectrics: Electronic Structure Modulation by AgBiSe2 Alloying

Successful applications of a thermoelectric material require simultaneous development of compatible n- and p-type counterparts. While the thermoelectric performance of p-type GeTe has been improved tremendously in recent years, it has been a challenge to find a compatible n-type GeTe counterpart due...

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Veröffentlicht in:	Journal of the American Chemical Society 2019-12, Vol.141 (49), p.19505-19512
Hauptverfasser:	Samanta, Manisha, Ghosh, Tanmoy, Arora, Raagya, Waghmare, Umesh V, Biswas, Kanishka
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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