Closed System LPE Growth of Cd sub x Hg sub 1--x Te

Closed System LPE Growth of Cd sub x Hg sub 1--x Te

Epitaxial layers of Cd sub x Hg sub 1--x Te are grown on CdTe substrate from Hg- and Te-rich solutions and from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of Cd sub x Hg sub 1--x Te (0.2 < = x < = 0.3) in a closed system is studied...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1983-07, Vol.78 (1), p.125-131
Hauptverfasser: Mironov, K E, Ogorodnikov, V K, Rozumnyi, V D, Ivanov-Omskii, V I
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creator Mironov, K E
Ogorodnikov, V K
Rozumnyi, V D
Ivanov-Omskii, V I
description Epitaxial layers of Cd sub x Hg sub 1--x Te are grown on CdTe substrate from Hg- and Te-rich solutions and from stoichiometric melts. The interaction of the gas phase with the substrate and the layer during LPE growth of Cd sub x Hg sub 1--x Te (0.2 < = x < = 0.3) in a closed system is studied. It is shown that mirror-smooth layers can be obtained under conditions precluding condensation of vapor on the epilayer surface. The compositional profiles over the surface and in the direction of growth studied under different conditions are discussed. The mechanisms of constant and graded composition layer growth are considered. The advantages and shortcomings of the various methods of closed-system Cd sub x Hg sub 1--x Te liquid-phase epitaxial growth are analyzed. 12 ref.--AA
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title Closed System LPE Growth of Cd sub x Hg sub 1--x Te
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