Intense electron-beam pinch formation and propagation in rod pinch diodes

Intense electron-beam pinch formation and propagation in rod pinch diodes

Intense electron-beam pinches are formed and propagated at relatively high impedance (5–25 Ω) using rod pinch diodes. Pinch propagation of up to 20 cm with 45% efficiency and ion-generation efficiency ≳15% has been observed.

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Bibliographische Detailangaben
Veröffentlicht in:Appl. Phys. Lett.; (United States) 1978-11, Vol.33 (9), p.795-797
Hauptverfasser: Mahaffey, R. A., Golden, J., Goldstein, Shyke A., Cooperstein, G.
Format: Artikel
Sprache:eng
Schlagworte:
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
BEAM OPTICS
BEAM-PLASMA SYSTEMS
BEAMS
EFFICIENCY
ELECTRON BEAMS
IMPEDANCE
ION SOURCES
LEPTON BEAMS
PARTICLE BEAMS 700106 > Fusion Energy-- Plasma Research-- Plasma Production-- (-1987)
PINCH EFFECT
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Beschreibung
Zusammenfassung:Intense electron-beam pinches are formed and propagated at relatively high impedance (5–25 Ω) using rod pinch diodes. Pinch propagation of up to 20 cm with 45% efficiency and ion-generation efficiency ≳15% has been observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.90550