Kinetics and properties of chemically vapour-deposited tungsten films on silicon substrates
The kinetic parameters for the deposition of tungsten films on silicon substrates were evaluated. The reactions (hydrogen reduction or silicon reduction of tungsten hexafluoride) were performed in a resistance-heated horizontal reactor. Film structure and composition were examined by X-ray diffracti...
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Veröffentlicht in: | Thin solid films 1978-07, Vol.52 (2), p.181-194 |
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container_title | Thin solid films |
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creator | Morosanu, Constantin-Eugen Soltuz, Valerian |
description | The kinetic parameters for the deposition of tungsten films on silicon substrates were evaluated. The reactions (hydrogen reduction or silicon reduction of tungsten hexafluoride) were performed in a resistance-heated horizontal reactor. Film structure and composition were examined by X-ray diffraction, scanning electron microscopy and electron microprobe analysis. The physical, optical, chemical and electrical properties of the films were also measured and are discussed. |
doi_str_mv | 10.1016/0040-6090(78)90137-2 |
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title | Kinetics and properties of chemically vapour-deposited tungsten films on silicon substrates |
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