Temperature dependence of the Hall factor and the conductivity mobility in rho - type silicon

Temperature dependence of the Hall factor and the conductivity mobility in rho - type silicon

The authors have measured the Hall coefficient of ultra pure rho -type silicon as a function of both magnetic field and temperature in the range 20-50 K, where acoustic phonon scattering dominates. The temperature dependences of the Hall factor and both the Hall and the conductivity mobilities have...

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Veröffentlicht in:Journal of applied physics 1982-01, Vol.53 (10), p.6880-6884
Hauptverfasser: Mitchel, W C, Hemenger, P M
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container_issue 10
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container_title Journal of applied physics
container_volume 53
creator Mitchel, W C
Hemenger, P M
description The authors have measured the Hall coefficient of ultra pure rho -type silicon as a function of both magnetic field and temperature in the range 20-50 K, where acoustic phonon scattering dominates. The temperature dependences of the Hall factor and both the Hall and the conductivity mobilities have been determined. The Hall factor was found to have a small deviation from the generally accepted value of 3 pi /8 and to be slightly temperature dependent. The temperature dependence of the conductivity mobility was found to be T super(-1.75 plus or minus 0.05).
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title Temperature dependence of the Hall factor and the conductivity mobility in rho - type silicon
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