Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets
As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been...
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Veröffentlicht in: | ACS applied materials & interfaces 2019-11, Vol.11 (44), p.41821-41827 |
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description | As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. Our results demonstrate the critical significance of surface in CdSe NPLs for their optical properties, which is crucial for the application of optoelectronic devices. |
doi_str_mv | 10.1021/acsami.9b16044 |
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However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. 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Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. 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Mater. Interfaces</addtitle><date>2019-11-06</date><risdate>2019</risdate><volume>11</volume><issue>44</issue><spage>41821</spage><epage>41827</epage><pages>41821-41827</pages><issn>1944-8244</issn><eissn>1944-8252</eissn><abstract>As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. Our results demonstrate the critical significance of surface in CdSe NPLs for their optical properties, which is crucial for the application of optoelectronic devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsami.9b16044</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-2840-1880</orcidid><orcidid>https://orcid.org/0000-0002-0445-7847</orcidid></addata></record> |
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title | Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets |
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