A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminiu...

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Veröffentlicht in:	Science (American Association for the Advancement of Science) 2019-09, Vol.365 (6460), p.1454-1457
Hauptverfasser:	Chaudhuri, Reet, Bader, Samuel James, Chen, Zhen, Muller, David A., Xing, Huili Grace, Jena, Debdeep
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Aluminum nitride Cryogenic temperature Current carriers Density Dopants Electron gas Electronics Electronics industry Epitaxial growth Gallium Gallium nitrides Gases Interfaces Molecular beam epitaxy Polarization Quantum wells Semiconductors Transistors Transport properties Valence band Wide bandgap semiconductors
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