Efficient and Stable Inverted Quantum Dot Light-Emitting Diodes Enabled by An Inorganic Copper-Doped Tungsten Phosphate Hole-Injection Layer

Inorganic interfacial buffer layers have widely been employed for efficient and long lifetime optoelectronic devices due to their high carrier mobility and excellent chemical/thermal stability. In this paper, we developed a solution-processed inorganic tungsten phosphate (TPA) as hole injection laye...

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Veröffentlicht in:	ACS applied materials & interfaces 2019-10, Vol.11 (43), p.40267-40273
Hauptverfasser:	Cao, Fan, Wu, Qianqian, Yang, Xuyong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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