Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing

Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2‑based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dua...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:The journal of physical chemistry letters 2019-11, Vol.10 (21), p.6545-6550
Hauptverfasser: Lee, Jung Hwan, Shin, Dongguen, Rhee, Ryan, Yun, Sangeun, Yeom, Kyung Mun, Chun, Do Hyung, Lee, Sunje, Kim, Dongho, Yi, Yeonjin, Noh, Jun Hong, Park, Jong Hyeok
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 6550
container_issue 21
container_start_page 6545
container_title The journal of physical chemistry letters
container_volume 10
creator Lee, Jung Hwan
Shin, Dongguen
Rhee, Ryan
Yun, Sangeun
Yeom, Kyung Mun
Chun, Do Hyung
Lee, Sunje
Kim, Dongho
Yi, Yeonjin
Noh, Jun Hong
Park, Jong Hyeok
description Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2‑based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
doi_str_mv 10.1021/acs.jpclett.9b02488
format Article
fullrecord <record><control><sourceid>proquest_acs_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_2303208346</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2303208346</sourcerecordid><originalsourceid>FETCH-LOGICAL-a228t-d5207a35921d145a90fd6f3a58236ec25114a74c971ba7f0d130b8795e9d67603</originalsourceid><addsrcrecordid>eNpNkM9rwjAYhsPYYM7tL9glx12q-dE2ydGJmwNBQXcbhLT5WuJq6pqo__7q9LDT-_Hy8PHyIPRMyYgSRsemDKPtvmwgxpEqCEulvEEDqlKZCCqz23_3PXoIYUtIrogUA_T1arzFk8bVfgc-4pmvnQfonK9xAfEE4PGqMd50eO2XDJ_puWmcBbyCrj2Gbxch4KMzeHNqk3WEPZ54Dz3i60d0V5kmwNM1h-jzbbaZzpPF8v1jOlkkhjEZE5sxIgzPFKOWpplRpLJ5xU0mGc-hZBmlqRFpqQQtjKiIpZwUUqgMlM1FTvgQvVz-7rv25wAh6p0LJTT9bmgPQTNOOCOSp3mPji9or0xv20Pn-2GaEn32qP_Ki0d99ch_ARJIaFk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2303208346</pqid></control><display><type>article</type><title>Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing</title><source>ACS Publications</source><creator>Lee, Jung Hwan ; Shin, Dongguen ; Rhee, Ryan ; Yun, Sangeun ; Yeom, Kyung Mun ; Chun, Do Hyung ; Lee, Sunje ; Kim, Dongho ; Yi, Yeonjin ; Noh, Jun Hong ; Park, Jong Hyeok</creator><creatorcontrib>Lee, Jung Hwan ; Shin, Dongguen ; Rhee, Ryan ; Yun, Sangeun ; Yeom, Kyung Mun ; Chun, Do Hyung ; Lee, Sunje ; Kim, Dongho ; Yi, Yeonjin ; Noh, Jun Hong ; Park, Jong Hyeok</creatorcontrib><description>Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2‑based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.</description><identifier>ISSN: 1948-7185</identifier><identifier>EISSN: 1948-7185</identifier><identifier>DOI: 10.1021/acs.jpclett.9b02488</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>The journal of physical chemistry letters, 2019-11, Vol.10 (21), p.6545-6550</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-4944-8319 ; 0000-0002-6629-3147 ; 0000-0001-8668-2644 ; 0000-0003-4920-9668</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.9b02488$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acs.jpclett.9b02488$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27053,27901,27902,56713,56763</link.rule.ids></links><search><creatorcontrib>Lee, Jung Hwan</creatorcontrib><creatorcontrib>Shin, Dongguen</creatorcontrib><creatorcontrib>Rhee, Ryan</creatorcontrib><creatorcontrib>Yun, Sangeun</creatorcontrib><creatorcontrib>Yeom, Kyung Mun</creatorcontrib><creatorcontrib>Chun, Do Hyung</creatorcontrib><creatorcontrib>Lee, Sunje</creatorcontrib><creatorcontrib>Kim, Dongho</creatorcontrib><creatorcontrib>Yi, Yeonjin</creatorcontrib><creatorcontrib>Noh, Jun Hong</creatorcontrib><creatorcontrib>Park, Jong Hyeok</creatorcontrib><title>Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing</title><title>The journal of physical chemistry letters</title><addtitle>J. Phys. Chem. Lett</addtitle><description>Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2‑based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.</description><issn>1948-7185</issn><issn>1948-7185</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpNkM9rwjAYhsPYYM7tL9glx12q-dE2ydGJmwNBQXcbhLT5WuJq6pqo__7q9LDT-_Hy8PHyIPRMyYgSRsemDKPtvmwgxpEqCEulvEEDqlKZCCqz23_3PXoIYUtIrogUA_T1arzFk8bVfgc-4pmvnQfonK9xAfEE4PGqMd50eO2XDJ_puWmcBbyCrj2Gbxch4KMzeHNqk3WEPZ54Dz3i60d0V5kmwNM1h-jzbbaZzpPF8v1jOlkkhjEZE5sxIgzPFKOWpplRpLJ5xU0mGc-hZBmlqRFpqQQtjKiIpZwUUqgMlM1FTvgQvVz-7rv25wAh6p0LJTT9bmgPQTNOOCOSp3mPji9or0xv20Pn-2GaEn32qP_Ki0d99ch_ARJIaFk</recordid><startdate>20191107</startdate><enddate>20191107</enddate><creator>Lee, Jung Hwan</creator><creator>Shin, Dongguen</creator><creator>Rhee, Ryan</creator><creator>Yun, Sangeun</creator><creator>Yeom, Kyung Mun</creator><creator>Chun, Do Hyung</creator><creator>Lee, Sunje</creator><creator>Kim, Dongho</creator><creator>Yi, Yeonjin</creator><creator>Noh, Jun Hong</creator><creator>Park, Jong Hyeok</creator><general>American Chemical Society</general><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-4944-8319</orcidid><orcidid>https://orcid.org/0000-0002-6629-3147</orcidid><orcidid>https://orcid.org/0000-0001-8668-2644</orcidid><orcidid>https://orcid.org/0000-0003-4920-9668</orcidid></search><sort><creationdate>20191107</creationdate><title>Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing</title><author>Lee, Jung Hwan ; Shin, Dongguen ; Rhee, Ryan ; Yun, Sangeun ; Yeom, Kyung Mun ; Chun, Do Hyung ; Lee, Sunje ; Kim, Dongho ; Yi, Yeonjin ; Noh, Jun Hong ; Park, Jong Hyeok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a228t-d5207a35921d145a90fd6f3a58236ec25114a74c971ba7f0d130b8795e9d67603</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Jung Hwan</creatorcontrib><creatorcontrib>Shin, Dongguen</creatorcontrib><creatorcontrib>Rhee, Ryan</creatorcontrib><creatorcontrib>Yun, Sangeun</creatorcontrib><creatorcontrib>Yeom, Kyung Mun</creatorcontrib><creatorcontrib>Chun, Do Hyung</creatorcontrib><creatorcontrib>Lee, Sunje</creatorcontrib><creatorcontrib>Kim, Dongho</creatorcontrib><creatorcontrib>Yi, Yeonjin</creatorcontrib><creatorcontrib>Noh, Jun Hong</creatorcontrib><creatorcontrib>Park, Jong Hyeok</creatorcontrib><collection>MEDLINE - Academic</collection><jtitle>The journal of physical chemistry letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Jung Hwan</au><au>Shin, Dongguen</au><au>Rhee, Ryan</au><au>Yun, Sangeun</au><au>Yeom, Kyung Mun</au><au>Chun, Do Hyung</au><au>Lee, Sunje</au><au>Kim, Dongho</au><au>Yi, Yeonjin</au><au>Noh, Jun Hong</au><au>Park, Jong Hyeok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing</atitle><jtitle>The journal of physical chemistry letters</jtitle><addtitle>J. Phys. Chem. Lett</addtitle><date>2019-11-07</date><risdate>2019</risdate><volume>10</volume><issue>21</issue><spage>6545</spage><epage>6550</epage><pages>6545-6550</pages><issn>1948-7185</issn><eissn>1948-7185</eissn><abstract>Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2‑based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.</abstract><pub>American Chemical Society</pub><doi>10.1021/acs.jpclett.9b02488</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4944-8319</orcidid><orcidid>https://orcid.org/0000-0002-6629-3147</orcidid><orcidid>https://orcid.org/0000-0001-8668-2644</orcidid><orcidid>https://orcid.org/0000-0003-4920-9668</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1948-7185
ispartof The journal of physical chemistry letters, 2019-11, Vol.10 (21), p.6545-6550
issn 1948-7185
1948-7185
language eng
recordid cdi_proquest_miscellaneous_2303208346
source ACS Publications
title Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T00%3A43%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_acs_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Band%20Alignment%20Engineering%20between%20Planar%20SnO2%20and%20Halide%20Perovskites%20via%20Two-Step%20Annealing&rft.jtitle=The%20journal%20of%20physical%20chemistry%20letters&rft.au=Lee,%20Jung%20Hwan&rft.date=2019-11-07&rft.volume=10&rft.issue=21&rft.spage=6545&rft.epage=6550&rft.pages=6545-6550&rft.issn=1948-7185&rft.eissn=1948-7185&rft_id=info:doi/10.1021/acs.jpclett.9b02488&rft_dat=%3Cproquest_acs_j%3E2303208346%3C/proquest_acs_j%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2303208346&rft_id=info:pmid/&rfr_iscdi=true