Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS_{2}

Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS_{2} by a combination of CO-tip noncontact atomic...

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Veröffentlicht in:Physical review letters 2019-08, Vol.123 (7), p.076801-076801
Hauptverfasser: Schuler, Bruno, Qiu, Diana Y, Refaely-Abramson, Sivan, Kastl, Christoph, Chen, Christopher T, Barja, Sara, Koch, Roland J, Ogletree, D Frank, Aloni, Shaul, Schwartzberg, Adam M, Neaton, Jeffrey B, Louie, Steven G, Weber-Bargioni, Alexander
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container_issue 7
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container_title Physical review letters
container_volume 123
creator Schuler, Bruno
Qiu, Diana Y
Refaely-Abramson, Sivan
Kastl, Christoph
Chen, Christopher T
Barja, Sara
Koch, Roland J
Ogletree, D Frank
Aloni, Shaul
Schwartzberg, Adam M
Neaton, Jeffrey B
Louie, Steven G
Weber-Bargioni, Alexander
description Structural defects in 2D materials offer an effective way to engineer new material functionalities beyond conventional doping. We report on the direct experimental correlation of the atomic and electronic structure of a sulfur vacancy in monolayer WS_{2} by a combination of CO-tip noncontact atomic force microscopy and scanning tunneling microscopy. Sulfur vacancies, which are absent in as-grown samples, were deliberately created by annealing in vacuum. Two energetically narrow unoccupied defect states followed by vibronic sidebands provide a unique fingerprint of this defect. Direct imaging of the defect orbitals, together with ab initio GW calculations, reveal that the large splitting of 252±4  meV between these defect states is induced by spin-orbit coupling.
doi_str_mv 10.1103/PhysRevLett.123.076801
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title Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS_{2}
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