Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance

Chalcogenide compounds are the main characters in a revolution in electronic memories. These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good selectivity and moderate leakage current and phase-change memories (PCMs) with excellent endurance and short read/write time...

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Veröffentlicht in:	ACS nano 2019-09, Vol.13 (9), p.10440-10447
Hauptverfasser:	Adinolfi, Valerio, Cheng, Lanxia, Laudato, Mario, Clarke, Ryan C, Narasimhan, Vijay K, Balatti, Simone, Hoang, Son, Littau, Karl A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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