Reducing grain-boundary effects in polycrystalline silicon solar cells

Solar-cell structures were prepared by depositing successively p- and n+-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundarie...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1976-11, Vol.29 (10), p.675-676
1. Verfasser: Chu, T. L.
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container_title Appl. Phys. Lett.; (United States)
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creator Chu, T. L.
description Solar-cell structures were prepared by depositing successively p- and n+-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained.
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ispartof Appl. Phys. Lett.; (United States), 1976-11, Vol.29 (10), p.675-676
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subjects CONVERSION
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
EFFICIENCY
ELEMENTS
ENERGY CONVERSION
FABRICATION
GRAIN BOUNDARIES
LAYERS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion
SOLAR ENERGY
SOLAR ENERGY CONVERSION
title Reducing grain-boundary effects in polycrystalline silicon solar cells
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