Reducing grain-boundary effects in polycrystalline silicon solar cells
Solar-cell structures were prepared by depositing successively p- and n+-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundarie...
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Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1976-11, Vol.29 (10), p.675-676 |
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creator | Chu, T. L. |
description | Solar-cell structures were prepared by depositing successively p- and n+-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained. |
doi_str_mv | 10.1063/1.88898 |
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The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained.</description><subject>CONVERSION</subject><subject>CRYSTAL STRUCTURE</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>DOPED MATERIALS</subject><subject>EFFICIENCY</subject><subject>ELEMENTS</subject><subject>ENERGY CONVERSION</subject><subject>FABRICATION</subject><subject>GRAIN BOUNDARIES</subject><subject>LAYERS</subject><subject>MICROSTRUCTURE</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>SEMIMETALS</subject><subject>SILICON</subject><subject>SILICON SOLAR CELLS</subject><subject>SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion</subject><subject>SOLAR ENERGY</subject><subject>SOLAR ENERGY CONVERSION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEQhoMoWKv4FxYPetqabDab5CjFqlAQRM8hm48aSZOa2T3037ttPQ0DD-888yJ0S_CC4I4-koUQQoozNCOY85oSIs7RDGNM604ycomuAH6mlTWUztDqw9nRhLSpNkWHVPd5TFaXfeW8d2aAKqRql-PelD0MOsaQXAUhBpNTBTnqUhkXI1yjC68juJv_OUdfq-fP5Wu9fn95Wz6ta9MIOtQN7Tznsu1M4wVviTeWOM6ZldJqT1rmbe-tk73pWWuopp3U3tGGs7az1Fs6R3en3AxDUGDC4Mz35JImV8UJa-l0Z47uT9Cu5N_RwaC2AQ6aOrk8gmqaTkiCD-DDCTQlAxTn1a6E7fS9IlgdylREHcukf6jeZw4</recordid><startdate>19761115</startdate><enddate>19761115</enddate><creator>Chu, T. 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L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c283t-236f77946c2f8741fcd1e775d99daf145fdbfde9bcb54c3a369afe327546d3fd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><topic>CONVERSION</topic><topic>CRYSTAL STRUCTURE</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>DOPED MATERIALS</topic><topic>EFFICIENCY</topic><topic>ELEMENTS</topic><topic>ENERGY CONVERSION</topic><topic>FABRICATION</topic><topic>GRAIN BOUNDARIES</topic><topic>LAYERS</topic><topic>MICROSTRUCTURE</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>SEMIMETALS</topic><topic>SILICON</topic><topic>SILICON SOLAR CELLS</topic><topic>SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion</topic><topic>SOLAR ENERGY</topic><topic>SOLAR ENERGY CONVERSION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chu, T. L.</creatorcontrib><creatorcontrib>Southern Methodist University, Dallas, Texas 75275</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chu, T. L.</au><aucorp>Southern Methodist University, Dallas, Texas 75275</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reducing grain-boundary effects in polycrystalline silicon solar cells</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1976-11-15</date><risdate>1976</risdate><volume>29</volume><issue>10</issue><spage>675</spage><epage>676</epage><pages>675-676</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Solar-cell structures were prepared by depositing successively p- and n+-type silicon layers on low-resistivity p-type polycrystalline silicon substrates. The characteristics of the solar cells are limited predominately by the grain boundaries in the deposited p layer. The effects of grain boundaries can be reduced by increasing the dopant concentration in the p layer, and solar cells of lower series resistance and higher conversion efficiency have been obtained.</abstract><cop>United States</cop><doi>10.1063/1.88898</doi><tpages>2</tpages></addata></record> |
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subjects | CONVERSION CRYSTAL STRUCTURE DIRECT ENERGY CONVERTERS DOPED MATERIALS EFFICIENCY ELEMENTS ENERGY CONVERSION FABRICATION GRAIN BOUNDARIES LAYERS MICROSTRUCTURE PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS SEMIMETALS SILICON SILICON SOLAR CELLS SOLAR CELLS 140501 -- Solar Energy Conversion-- Photovoltaic Conversion SOLAR ENERGY SOLAR ENERGY CONVERSION |
title | Reducing grain-boundary effects in polycrystalline silicon solar cells |
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