Improved efficiency of MIS-silicon solar cells by HF treatment of the oxide layer

Low-temperature processes, which can be used for MIS structures, are very applicable for polysilicon solar cells. An HF treatment of the insulating oxide layer in single-crystal MIS-silicon solar cells turned out to enhance the short-circuit current such that the AM1 efficiency appeared to be more than 10% without antireflection coating. A low surface recombination is indicated by the response to the blue part of the solar spectrum.