Electromigration in thin aluminum films on titanium nitride
The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing...
Gespeichert in:
Veröffentlicht in: | Journal of applied physics 1976-04, Vol.47 (4), p.1203-1208 |
---|---|
1. Verfasser: | |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1208 |
---|---|
container_issue | 4 |
container_start_page | 1203 |
container_title | Journal of applied physics |
container_volume | 47 |
creator | Blech, I A |
description | The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 106 A/cm2. |
doi_str_mv | 10.1063/1.322842 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_22601269</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22601232</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-9b1b983e59c5b018bc550bf69f7d6ebe6706456c3da1e9ee2ae8c5423bff11683</originalsourceid><addsrcrecordid>eNqNkE1LAzEQhoMoWKvgT9iTeNmaSZpsgicprQoFL3oOSTrRyH7UJHvw37uy_gAv88K8D8PwEHINdAVU8jtYccbUmp2QBVCl60YIekoWlDKolW70ObnI-ZNSAMX1gtxvW_QlDV18T7bEoa9iX5WPadh27GI_dlWIbZerqSmx2D5Omz6WFA94Sc6CbTNe_eWSvO22r5unev_y-Lx52NeeC15q7cBpxVFoLxwF5fz0kgtSh-Yg0aFsqFwL6fnBAmpEZlF5sWbchQAgFV-Sm_nuMQ1fI-Ziupg9tq3tcRizYUxSYFL_E-RsAm9n0Kch54TBHFPsbPo2QM2vRgNm1sh_AI-2ZDA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>22601232</pqid></control><display><type>article</type><title>Electromigration in thin aluminum films on titanium nitride</title><source>AIP Digital Archive</source><creator>Blech, I A</creator><creatorcontrib>Blech, I A</creatorcontrib><description>The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 106 A/cm2.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.322842</identifier><language>eng</language><ispartof>Journal of applied physics, 1976-04, Vol.47 (4), p.1203-1208</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-9b1b983e59c5b018bc550bf69f7d6ebe6706456c3da1e9ee2ae8c5423bff11683</citedby><cites>FETCH-LOGICAL-c353t-9b1b983e59c5b018bc550bf69f7d6ebe6706456c3da1e9ee2ae8c5423bff11683</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Blech, I A</creatorcontrib><title>Electromigration in thin aluminum films on titanium nitride</title><title>Journal of applied physics</title><description>The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 106 A/cm2.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNqNkE1LAzEQhoMoWKvgT9iTeNmaSZpsgicprQoFL3oOSTrRyH7UJHvw37uy_gAv88K8D8PwEHINdAVU8jtYccbUmp2QBVCl60YIekoWlDKolW70ObnI-ZNSAMX1gtxvW_QlDV18T7bEoa9iX5WPadh27GI_dlWIbZerqSmx2D5Omz6WFA94Sc6CbTNe_eWSvO22r5unev_y-Lx52NeeC15q7cBpxVFoLxwF5fz0kgtSh-Yg0aFsqFwL6fnBAmpEZlF5sWbchQAgFV-Sm_nuMQ1fI-Ziupg9tq3tcRizYUxSYFL_E-RsAm9n0Kch54TBHFPsbPo2QM2vRgNm1sh_AI-2ZDA</recordid><startdate>19760401</startdate><enddate>19760401</enddate><creator>Blech, I A</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>8FD</scope><scope>JG9</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>19760401</creationdate><title>Electromigration in thin aluminum films on titanium nitride</title><author>Blech, I A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-9b1b983e59c5b018bc550bf69f7d6ebe6706456c3da1e9ee2ae8c5423bff11683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Blech, I A</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Blech, I A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electromigration in thin aluminum films on titanium nitride</atitle><jtitle>Journal of applied physics</jtitle><date>1976-04-01</date><risdate>1976</risdate><volume>47</volume><issue>4</issue><spage>1203</spage><epage>1208</epage><pages>1203-1208</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The aluminum electromigration drift velocity was measured at the temperature range 250–400 °C. A threshold current density was found inversely proportional to the stripe length. An activation energy of 0.65 eV was found for the drift velocity. The occurrence of the threshold is explained by opposing chemical gradients created by the atom pile-up and depletion at the stripe ends. The threshold may explain several observations reported previously. The threshold is increased by decreasing the temperature or by enclosing the aluminum in silicon nitride. Virtually no electromigration is seen for very short aluminum stripes even at current densities above 106 A/cm2.</abstract><doi>10.1063/1.322842</doi><tpages>6</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0021-8979 |
ispartof | Journal of applied physics, 1976-04, Vol.47 (4), p.1203-1208 |
issn | 0021-8979 1089-7550 |
language | eng |
recordid | cdi_proquest_miscellaneous_22601269 |
source | AIP Digital Archive |
title | Electromigration in thin aluminum films on titanium nitride |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T06%3A42%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electromigration%20in%20thin%20aluminum%20films%20on%20titanium%20nitride&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Blech,%20I%20A&rft.date=1976-04-01&rft.volume=47&rft.issue=4&rft.spage=1203&rft.epage=1208&rft.pages=1203-1208&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.322842&rft_dat=%3Cproquest_cross%3E22601232%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=22601232&rft_id=info:pmid/&rfr_iscdi=true |