Capless annealing of ion-implanted GaAs

A method is reported for capless annealing of ion-implanted GaAs which gives electrical activation of Se-implanted wafers nearly identical to that obtained with sputtered silicon nitride caps. State-of-the-art performance has been realized from Schottky-gate FET’s fabricated from this material.

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Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1976-07, Vol.29 (2), p.94-95
Hauptverfasser:	Immorlica, A. A., Eisen, F. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	360605 - Materials- Radiation Effects ANNEALING ARSENIC COMPOUNDS ARSENIDES ATOMIC IONS CHARGED PARTICLES FIELD EFFECT TRANSISTORS GALLIUM ARSENIDES GALLIUM COMPOUNDS HEAT TREATMENTS ION IMPLANTATION IONS LUMINESCENCE MATERIALS SCIENCE PHOTOLUMINESCENCE PHYSICAL RADIATION EFFECTS PNICTIDES RADIATION EFFECTS SELENIUM IONS SEMICONDUCTOR DEVICES TRANSISTORS
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